All MOSFET. SWH055R03VT Datasheet

 

SWH055R03VT Datasheet and Replacement


   Type Designator: SWH055R03VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 327 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm
   Package: DFN3X3
 

 SWH055R03VT substitution

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SWH055R03VT Datasheet (PDF)

 ..1. Size:913K  samwin
 swh055r03vt swha055r03vt.pdf pdf_icon

SWH055R03VT

SW055R03VT N-channel Enhanced mode DFN3*3/DFN5*6 MOSFET Features BVDSS : 30V DFN5*6 DFN3*3 High ruggedness ID : 20A Low RDS(ON) (Typ 6.8m)@VGS=4.5V 1 8 1 8 RDS(ON) : 6.8m@VGS=4.5V (Typ 5.7m)@VGS=10V 2 7 2 7 Low Gate Charge (Typ 25nC) 6 6 3 3 5.7m@VGS=10V 4 5 5 4 Improved dv/dt Capability 100% Avalanche Tested D A

 ..2. Size:908K  samwin
 sw055r03vt swh055r03vt swha055r03vt.pdf pdf_icon

SWH055R03VT

SW055R03VTN-channel Enhanced mode DFN3*3/DFN5*6 MOSFETFeaturesBVDSS : 30VDFN5*6DFN3*3 High ruggednessID : 20A Low RDS(ON) (Typ 6.8m)@VGS=4.5V1 8 1 8RDS(ON) : 6.8m@VGS=4.5V(Typ 5.7m)@VGS=10V2 7 2 7 Low Gate Charge (Typ 25nC) 6 63 35.7m@VGS=10V4 5 54 Improved dv/dt Capability 100% Avalanche TestedD Application:DC-DC Converte

Datasheet: SSF50R240S , SSP50R240S , SSW50R240S , SSA50R240S , SWB035R08ET , SWB038R10ES , SWP038R10ES , SWT038R10ES , P0903BDG , SWHA055R03VT , SWB075R06ET , SWP075R06ET , SWK088R06VT , SWI088R06VT , SWD088R06VT , SWHA088R06VT , SWU10N70D .

History: FDC6310P | D7N60 | SML801R4BN | AUIRL1404ZSTRL | VSP1R4N04HS-G | NTR1P02LT1 | FDS6299S

Keywords - SWH055R03VT MOSFET datasheet

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