SWH055R03VT PDF and Equivalents Search

 

SWH055R03VT Specs and Replacement

Type Designator: SWH055R03VT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 59 nS

Cossⓘ - Output Capacitance: 327 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm

Package: DFN3X3

SWH055R03VT substitution

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SWH055R03VT datasheet

 ..1. Size:913K  samwin
 swh055r03vt swha055r03vt.pdf pdf_icon

SWH055R03VT

SW055R03VT N-channel Enhanced mode DFN3*3/DFN5*6 MOSFET Features BVDSS 30V DFN5*6 DFN3*3 High ruggedness ID 20A Low RDS(ON) (Typ 6.8m )@VGS=4.5V 1 8 1 8 RDS(ON) 6.8m @VGS=4.5V (Typ 5.7m )@VGS=10V 2 7 2 7 Low Gate Charge (Typ 25nC) 6 6 3 3 5.7m @VGS=10V 4 5 5 4 Improved dv/dt Capability 100% Avalanche Tested D A... See More ⇒

 ..2. Size:908K  samwin
 sw055r03vt swh055r03vt swha055r03vt.pdf pdf_icon

SWH055R03VT

SW055R03VT N-channel Enhanced mode DFN3*3/DFN5*6 MOSFET Features BVDSS 30V DFN5*6 DFN3*3 High ruggedness ID 20A Low RDS(ON) (Typ 6.8m )@VGS=4.5V 1 8 1 8 RDS(ON) 6.8m @VGS=4.5V (Typ 5.7m )@VGS=10V 2 7 2 7 Low Gate Charge (Typ 25nC) 6 6 3 3 5.7m @VGS=10V 4 5 5 4 Improved dv/dt Capability 100% Avalanche Tested D Application DC-DC Converte... See More ⇒

Detailed specifications: SSF50R240S, SSP50R240S, SSW50R240S, SSA50R240S, SWB035R08ET, SWB038R10ES, SWP038R10ES, SWT038R10ES, IRF1407, SWHA055R03VT, SWB075R06ET, SWP075R06ET, SWK088R06VT, SWI088R06VT, SWD088R06VT, SWHA088R06VT, SWU10N70D

Keywords - SWH055R03VT MOSFET specs

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