All MOSFET. SWH055R03VT Datasheet

 

SWH055R03VT MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWH055R03VT
   Marking Code: SW055R03V
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.8 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 59 nS
   Cossⓘ - Output Capacitance: 327 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0071 Ohm
   Package: DFN3X3

 SWH055R03VT Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWH055R03VT Datasheet (PDF)

 ..1. Size:913K  samwin
 swh055r03vt swha055r03vt.pdf

SWH055R03VT SWH055R03VT

SW055R03VT N-channel Enhanced mode DFN3*3/DFN5*6 MOSFET Features BVDSS : 30V DFN5*6 DFN3*3 High ruggedness ID : 20A Low RDS(ON) (Typ 6.8m)@VGS=4.5V 1 8 1 8 RDS(ON) : 6.8m@VGS=4.5V (Typ 5.7m)@VGS=10V 2 7 2 7 Low Gate Charge (Typ 25nC) 6 6 3 3 5.7m@VGS=10V 4 5 5 4 Improved dv/dt Capability 100% Avalanche Tested D A

 ..2. Size:908K  samwin
 sw055r03vt swh055r03vt swha055r03vt.pdf

SWH055R03VT SWH055R03VT

SW055R03VTN-channel Enhanced mode DFN3*3/DFN5*6 MOSFETFeaturesBVDSS : 30VDFN5*6DFN3*3 High ruggednessID : 20A Low RDS(ON) (Typ 6.8m)@VGS=4.5V1 8 1 8RDS(ON) : 6.8m@VGS=4.5V(Typ 5.7m)@VGS=10V2 7 2 7 Low Gate Charge (Typ 25nC) 6 63 35.7m@VGS=10V4 5 54 Improved dv/dt Capability 100% Avalanche TestedD Application:DC-DC Converte

Datasheet: AM3401 , AM3402N , AM3403P , AM3405P , AM3406 , AM3406N , AM3407 , AM3407PE , 7N60 , AM3412N , AM3413 , AM3413P , AM3415 , AM3415A , AM3416 , AM3422 , AM3423P .

 

 
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