SWK088R06VT PDF and Equivalents Search

 

SWK088R06VT Specs and Replacement

Type Designator: SWK088R06VT

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 77 nS

Cossⓘ - Output Capacitance: 207 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: SOP-8

SWK088R06VT substitution

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SWK088R06VT datasheet

 ..1. Size:681K  samwin
 sw088r06vt swk088r06vt swi088r06vt swd088r06vt swha088r06vt.pdf pdf_icon

SWK088R06VT

SW088R06VT N-channel Enhanced mode SOP-8/TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 SOP-8 BVDSS 60V High ruggedness Low RDS(ON) (Typ 11m )@VGS=4.5V ID 40A 5 6 Low RDS(ON) (Typ 9.2m )@VGS=10V 7 8 RDS(ON) 11m @VGS=4.5V Low Gate Charge (Typ 48nC) 4 3 Improved dv/dt Capability 2 9.2m @VGS=10V 1 100% A... See More ⇒

 ..2. Size:803K  samwin
 swk088r06vt.pdf pdf_icon

SWK088R06VT

SW088R06VT N-channel Enhanced mode SOP8 MOSFET Features SOP8 BVDSS 60V High ruggedness Low RDS(ON) (Typ 11m )@VGS=4.5V ID 40A 5 6 Low RDS(ON) (Typ 9.2m )@VGS=10V 7 8 RDS(ON) 11m @VGS=4.5V Low Gate Charge (Typ 48nC) 4 3 Improved dv/dt Capability 2 9.2m @VGS=10V 1 100% Avalanche Tested Application Electronic Ballast, Motor D Control Sync... See More ⇒

 9.1. Size:845K  samwin
 swk083r06vls.pdf pdf_icon

SWK088R06VT

SW083R06VLS N-channel Enhanced mode SOP-8 MOSFET Features SOP-8 BVDSS 60V High ruggedness Low RDS(ON) (Typ 13m )@VGS=4.5V 5 ID 10A 6 (Typ 9.7m )@VGS=10V 7 8 Low Gate Charge (Typ 22nC) RDS(ON) 13m @VGS=4.5V 4 Improved dv/dt Capability 3 9.7m @VGS=10V 2 100% Avalanche Tested 1 Application Synchronous Rectification, D Li Battery Protec... See More ⇒

 9.2. Size:669K  samwin
 swk083r06vs.pdf pdf_icon

SWK088R06VT

SW083R06VS N-channel Enhanced mode SOP8 MOSFET Features SOP8 BVDSS 60V High ruggedness Low RDS(ON) (Typ 12m )@VGS=4.5V 5 ID 10A 6 (Typ 9.5m )@VGS=10V 7 8 Low Gate Charge (Typ 18nC) RDS(ON) 12m @VGS=4.5V 4 Improved dv/dt Capability 3 9.5m @VGS=10V 2 100% Avalanche Tested 1 Application Synchronous Rectification, ... See More ⇒

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Detailed specifications: SWB035R08ET, SWB038R10ES, SWP038R10ES, SWT038R10ES, SWH055R03VT, SWHA055R03VT, SWB075R06ET, SWP075R06ET, RFP50N06, SWI088R06VT, SWD088R06VT, SWHA088R06VT, SWU10N70D, SWF10N70K, SWD10N70K, SWF12N65D, SWU12N65D

Keywords - SWK088R06VT MOSFET specs

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