All MOSFET. SWK088R06VT Datasheet

 

SWK088R06VT Datasheet and Replacement


   Type Designator: SWK088R06VT
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 207 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm
   Package: SOP-8
 

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SWK088R06VT Datasheet (PDF)

 ..1. Size:681K  samwin
 sw088r06vt swk088r06vt swi088r06vt swd088r06vt swha088r06vt.pdf pdf_icon

SWK088R06VT

SW088R06VT N-channel Enhanced mode SOP-8/TO-251/TO-252/DFN5*6 MOSFET Features TO-251 TO-252 DFN5*6 SOP-8 BVDSS : 60V High ruggedness Low RDS(ON) (Typ 11m)@VGS=4.5V ID : 40A 5 6 Low RDS(ON) (Typ 9.2m)@VGS=10V 7 8 RDS(ON) : 11m@VGS=4.5V Low Gate Charge (Typ 48nC) 4 3 Improved dv/dt Capability 2 9.2m@VGS=10V 1 100% A

 ..2. Size:803K  samwin
 swk088r06vt.pdf pdf_icon

SWK088R06VT

SW088R06VTN-channel Enhanced mode SOP8 MOSFETFeaturesSOP8BVDSS : 60V High ruggedness Low RDS(ON) (Typ 11m)@VGS=4.5VID : 40A56Low RDS(ON) (Typ 9.2m)@VGS=10V 78RDS(ON) : 11m@VGS=4.5V Low Gate Charge (Typ 48nC)43 Improved dv/dt Capability 29.2m@VGS=10V1 100% Avalanche Tested Application: Electronic Ballast, Motor DControl Sync

 9.1. Size:845K  samwin
 swk083r06vls.pdf pdf_icon

SWK088R06VT

SW083R06VLSN-channel Enhanced mode SOP-8 MOSFETFeaturesSOP-8BVDSS : 60V High ruggedness Low RDS(ON) (Typ 13m)@VGS=4.5V5ID : 10A6(Typ 9.7m)@VGS=10V78 Low Gate Charge (Typ 22nC)RDS(ON) : 13m@VGS=4.5V4 Improved dv/dt Capability 39.7m@VGS=10V2 100% Avalanche Tested1 Application:Synchronous Rectification,DLi Battery Protec

 9.2. Size:669K  samwin
 swk083r06vs.pdf pdf_icon

SWK088R06VT

SW083R06VS N-channel Enhanced mode SOP8 MOSFET Features SOP8 BVDSS : 60V High ruggedness Low RDS(ON) (Typ 12m)@VGS=4.5V 5 ID : 10A 6 (Typ 9.5m)@VGS=10V 7 8 Low Gate Charge (Typ 18nC) RDS(ON) : 12m@VGS=4.5V 4 Improved dv/dt Capability 3 9.5m@VGS=10V 2 100% Avalanche Tested 1 Application:Synchronous Rectification,

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Datasheet: SWB035R08ET , SWB038R10ES , SWP038R10ES , SWT038R10ES , SWH055R03VT , SWHA055R03VT , SWB075R06ET , SWP075R06ET , SKD502T , SWI088R06VT , SWD088R06VT , SWHA088R06VT , SWU10N70D , SWF10N70K , SWD10N70K , SWF12N65D , SWU12N65D .

History: STFU15N80K5 | ST12N10D | KNF4540A | STD17NF03L | TMU6N70 | SSQ6N60 | WMB014N06HG4

Keywords - SWK088R06VT MOSFET datasheet

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