SWP12N65D MOSFET Datasheet: N-Ch, 650V, 12A. Full specification with pinout and replacement list

SWP12N65D Specs and Replacement

Type Designator: SWP12N65D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 51 nS

Cossⓘ - Output Capacitance: 157 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO-220

SWP12N65D substitution

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SWP12N65D datasheet

..1. Size:1141K samwin
swf12n65d swu12n65d swp12n65d swb12n65d.pdf pdf_icon

SW12N65D N-channel Enhanced mode TO-220F/TO-262/TO-220/TO-263 MOSFET Features TO-220F TO-262 TO-220 TO-263 BVDSS 650V High ruggedness ID 12A Low RDS(ON) (Typ 0.7 )@VGS=10V RDS(ON) 0.7 Low Gate Charge (Typ 45nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 1 2 2 2 2 3 Application Charger,LED,PC Power 3 3 3 1. Gate 2.... See More ⇒

..2. Size:1147K samwin
sw12n65d swf12n65d swu12n65d swp12n65d swb12n65d.pdf pdf_icon

SW12N65D N-channel Enhanced mode TO-220F/TO-262/TO-220/TO-263 MOSFET Features TO-262 TO-220F TO-220 TO-263 BVDSS 650V High ruggedness ID 12A Low RDS(ON) (Typ 0.7 )@VGS=10V RDS(ON) 0.7 Low Gate Charge (Typ 45nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 1 2 2 2 2 3 Application Charge,LED,PC Power 3 3 3 1. Gate 2... See More ⇒

Detailed specifications: SWI088R06VT, SWD088R06VT, SWHA088R06VT, SWU10N70D, SWF10N70K, SWD10N70K, SWF12N65D, SWU12N65D, 2N60, SWB12N65D, SWF12N70D, SWU12N70D, SWMN12N70D, SWY12N70D, SWF15N65D, SWI15P02, SWD15P02