All MOSFET. SWP12N65D Datasheet

 

SWP12N65D Datasheet and Replacement


   Type Designator: SWP12N65D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 208.3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 12 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 157 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm
   Package: TO-220
 

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SWP12N65D Datasheet (PDF)

 ..1. Size:1141K  samwin
 swf12n65d swu12n65d swp12n65d swb12n65d.pdf pdf_icon

SWP12N65D

SW12N65D N-channel Enhanced mode TO-220F/TO-262/TO-220/TO-263 MOSFET Features TO-220F TO-262 TO-220 TO-263 BVDSS : 650V High ruggedness ID : 12A Low RDS(ON) (Typ 0.7)@VGS=10V RDS(ON) : 0.7 Low Gate Charge (Typ 45nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 1 2 2 2 2 3 Application:Charger,LED,PC Power 3 3 3 1. Gate 2.

 ..2. Size:1147K  samwin
 sw12n65d swf12n65d swu12n65d swp12n65d swb12n65d.pdf pdf_icon

SWP12N65D

SW12N65D N-channel Enhanced mode TO-220F/TO-262/TO-220/TO-263 MOSFET Features TO-262 TO-220F TO-220 TO-263 BVDSS : 650V High ruggedness ID : 12A Low RDS(ON) (Typ 0.7)@VGS=10V RDS(ON) : 0.7 Low Gate Charge (Typ 45nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 1 2 2 2 2 3 Application:Charge,LED,PC Power 3 3 3 1. Gate 2

Datasheet: SWI088R06VT , SWD088R06VT , SWHA088R06VT , SWU10N70D , SWF10N70K , SWD10N70K , SWF12N65D , SWU12N65D , IRF830 , SWB12N65D , SWF12N70D , SWU12N70D , SWMN12N70D , SWY12N70D , SWF15N65D , SWI15P02 , SWD15P02 .

History: IPP084N06L3G | SML20S56 | NP75N04YUK | WML12N100C2 | IPI04N03LA | MTE05N10FP | STD12N60DM2AG

Keywords - SWP12N65D MOSFET datasheet

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