SWI15P02 PDF and Equivalents Search

 

SWI15P02 Specs and Replacement

Type Designator: SWI15P02

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69.4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 67 nS

Cossⓘ - Output Capacitance: 490 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: TO-251

SWI15P02 substitution

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SWI15P02 datasheet

 ..1. Size:997K  samwin
 swi15p02 swd15p02 swh15p02 swha15p02.pdf pdf_icon

SWI15P02

SW15P02 P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET Features BVDSS -20V TO-251 TO-252 DFN3*3 DFN5*6 High ruggedness ID -15A Low RDS(ON) (Typ 9.4m )@VGS=-4.5V Low RDS(ON) (Typ 8.1m )@VGS=-10V RDS(ON) 9.4m @VGS=-4.5V Low Gate Charge (Typ 91nC) 8.1m @VGS=-10V Improved dv/dt Capability 1 100% Avalanche Tested 1 ... See More ⇒

 ..2. Size:997K  samwin
 sw15p02 swi15p02 swd15p02 swh15p02 swha15p02.pdf pdf_icon

SWI15P02

SW15P02 P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET Features BVDSS -20V TO-251 TO-252 DFN3*3 DFN5*6 High ruggedness ID -15A Low RDS(ON) (Typ 9.4m )@VGS=-4.5V Low RDS(ON) (Typ 8.1m )@VGS=-10V RDS(ON) 9.4m @VGS=-4.5V Low Gate Charge (Typ 91nC) 8.1m @VGS=-10V Improved dv/dt Capability 1 100% Avalanche Tested 1 ... See More ⇒

Detailed specifications: SWU12N65D, SWP12N65D, SWB12N65D, SWF12N70D, SWU12N70D, SWMN12N70D, SWY12N70D, SWF15N65D, IRF1405, SWD15P02, SWH15P02, SWHA15P02, SWK15P03, SWH15P03, SWF16N65D, SWP16N65K, SWF16N65K

Keywords - SWI15P02 MOSFET specs

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