All MOSFET. SWI15P02 Datasheet

 

SWI15P02 Datasheet and Replacement


   Type Designator: SWI15P02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 69.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO-251
 

 SWI15P02 substitution

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SWI15P02 Datasheet (PDF)

 ..1. Size:997K  samwin
 swi15p02 swd15p02 swh15p02 swha15p02.pdf pdf_icon

SWI15P02

SW15P02 P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET Features BVDSS : -20V TO-251 TO-252 DFN3*3 DFN5*6 High ruggedness ID : -15A Low RDS(ON) (Typ 9.4m)@VGS=-4.5V Low RDS(ON) (Typ 8.1m)@VGS=-10V RDS(ON) : 9.4m @VGS=-4.5V Low Gate Charge (Typ 91nC) 8.1m @VGS=-10V Improved dv/dt Capability 1 100% Avalanche Tested 1

 ..2. Size:997K  samwin
 sw15p02 swi15p02 swd15p02 swh15p02 swha15p02.pdf pdf_icon

SWI15P02

SW15P02 P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET Features BVDSS : -20V TO-251 TO-252 DFN3*3 DFN5*6 High ruggedness ID : -15A Low RDS(ON) (Typ 9.4m)@VGS=-4.5V Low RDS(ON) (Typ 8.1m)@VGS=-10V RDS(ON) : 9.4m @VGS=-4.5V Low Gate Charge (Typ 91nC) 8.1m @VGS=-10V Improved dv/dt Capability 1 100% Avalanche Tested 1

Datasheet: SWU12N65D , SWP12N65D , SWB12N65D , SWF12N70D , SWU12N70D , SWMN12N70D , SWY12N70D , SWF15N65D , NCEP15T14 , SWD15P02 , SWH15P02 , SWHA15P02 , SWK15P03 , SWH15P03 , SWF16N65D , SWP16N65K , SWF16N65K .

History: NDH8504P | JCS7N60FB | KNP9120A | ISZ0901NLS | WMB70N04T1 | SSM6N56FE | IRFR7740PBF

Keywords - SWI15P02 MOSFET datasheet

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