All MOSFET. SWI15P02 Datasheet

 

SWI15P02 Datasheet and Replacement


   Type Designator: SWI15P02
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 69.4 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 67 nS
   Cossⓘ - Output Capacitance: 490 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
   Package: TO-251
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SWI15P02 Datasheet (PDF)

 ..1. Size:997K  samwin
 swi15p02 swd15p02 swh15p02 swha15p02.pdf pdf_icon

SWI15P02

SW15P02 P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET Features BVDSS : -20V TO-251 TO-252 DFN3*3 DFN5*6 High ruggedness ID : -15A Low RDS(ON) (Typ 9.4m)@VGS=-4.5V Low RDS(ON) (Typ 8.1m)@VGS=-10V RDS(ON) : 9.4m @VGS=-4.5V Low Gate Charge (Typ 91nC) 8.1m @VGS=-10V Improved dv/dt Capability 1 100% Avalanche Tested 1

 ..2. Size:997K  samwin
 sw15p02 swi15p02 swd15p02 swh15p02 swha15p02.pdf pdf_icon

SWI15P02

SW15P02 P-channel Enhanced mode TO-251/TO-252/DFN3*3/DFN5*6 MOSFET Features BVDSS : -20V TO-251 TO-252 DFN3*3 DFN5*6 High ruggedness ID : -15A Low RDS(ON) (Typ 9.4m)@VGS=-4.5V Low RDS(ON) (Typ 8.1m)@VGS=-10V RDS(ON) : 9.4m @VGS=-4.5V Low Gate Charge (Typ 91nC) 8.1m @VGS=-10V Improved dv/dt Capability 1 100% Avalanche Tested 1

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: HGS210N12SL | BUK7620-100A | BUK565-100A | NTD4813N | FDP8874 | PP1410AK | WTC3401

Keywords - SWI15P02 MOSFET datasheet

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