All MOSFET. SWK15P03 Datasheet

 

SWK15P03 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SWK15P03
   Marking Code: SW15P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 48 nC
   trⓘ - Rise Time: 90 nS
   Cossⓘ - Output Capacitance: 344 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
   Package: SOP-8

 SWK15P03 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SWK15P03 Datasheet (PDF)

 ..1. Size:830K  samwin
swk15p03 swh15p03.pdf

SWK15P03
SWK15P03

SW15P03 P-channel Enhanced mode SOP-8/DFN3*3 MOSFET Features BVDSS : -30V SOP-8 DFN3*3 High ruggedness ID : -15A D Low RDS(ON) (Typ 14m)@VGS=-4.5V D D Low RDS(ON) (Typ 10m)@VGS=-10V RDS(ON) : 14m @VGS=-4.5V D G Low Gate Charge (Typ 48nC) S 10m @VGS=-10V Improved dv/dt Capability S S 100% Avalanche Tested D App

 ..2. Size:830K  samwin
sw15p03 swk15p03 swh15p03.pdf

SWK15P03
SWK15P03

SW15P03 P-channel Enhanced mode SOP-8/DFN3*3 MOSFET Features BVDSS : -30V SOP-8 DFN3*3 High ruggedness ID : -15A D Low RDS(ON) (Typ 14m)@VGS=-4.5V D D Low RDS(ON) (Typ 10m)@VGS=-10V RDS(ON) : 14m @VGS=-4.5V D G Low Gate Charge (Typ 48nC) S 10m @VGS=-10V Improved dv/dt Capability S S 100% Avalanche Tested D App

 9.1. Size:1004K  samwin
swk15n04v swha15n04v.pdf

SWK15P03
SWK15P03

SW15N04V N-channel Enhanced mode SOP8/DFN5*6 MOSFET Features BVDSS : 40V DFN5*6 SOP8 5 ID : 15A High ruggedness 6 1 8 7 Low RDS(ON) (Typ 6.5m)@VGS=4.5V 2 7 8 RDS(ON) : 6.5m@ VGS=4.5V 6 3 (Typ 5.8m)@VGS=10V 4 3 4 5 5.8m @ VGS=10V Low Gate Charge (Typ 49nC) 2 1 Improved dv/dt Capability D 100% Avalanche Tested

 9.2. Size:887K  samwin
swk15n06v.pdf

SWK15P03
SWK15P03

SW15N06V N-channel Enhanced mode SOP-8 MOSFET Features BVDSS : 60V SOP-8 D High ruggedness D ID : 15A D Low RDS(ON) (Typ 8.5m)@VGS=4.5V D RDS(ON) : 8.5m@VGS=4.5V (Typ 7.5m)@VGS=10V G Low Gate Charge (Typ 79nC) S 7.5m@VGS=10V S Improved dv/dt Capability S 100% Avalanche Tested G(4) D(5,6,7,8) D Application:DC

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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