All MOSFET. SWP16N65K Datasheet

 

SWP16N65K Datasheet and Replacement


   Type Designator: SWP16N65K
   Marking Code: SW16N65K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 271.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 43 nC
   tr ⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.25 Ohm
   Package: TO-220
 

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SWP16N65K Datasheet (PDF)

 ..1. Size:1213K  samwin
 sw16n65k swp16n65k swf16n65k swb16n65k.pdf pdf_icon

SWP16N65K

SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS : 650V ID : 16A High ruggedness Low RDS(ON) (Typ 0.23)@VGS=10V RDS(ON) :0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charge, PC Power 3 3 3 1. Gate 2. Drain 3. Source

 ..2. Size:1143K  samwin
 swp16n65k swf16n65k swb16n65k.pdf pdf_icon

SWP16N65K

SW16N65K N-channel Enhanced mode TO-220/TO-220F/TO-263 MOSFET Features TO-220 TO-220F TO-263 BVDSS : 650V ID : 16A High ruggedness Low RDS(ON) (Typ 0.23)@VGS=10V RDS(ON) :0.23 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 2 2 Application:LED, Charger, PC Power 3 3 3 1. Gate 2. Drain 3. Source

 9.1. Size:632K  samwin
 swp160r12vt.pdf pdf_icon

SWP16N65K

SW160R12VT N-channel Enhanced mode TO-220 MOSFET Features TO-220 BVDSS : 120V High ruggedness ID : 50A Low RDS(ON) (Typ 16.4m)@VGS=4.5V Low RDS(ON) (Typ 14.6m)@VGS=10V RDS(ON) : 16.4m@VGS=4.5V Low Gate Charge (Typ 64nC) 14.6m@VGS=10V Improved dv/dt Capability 1 100% Avalanche Tested 2 2 3 Application:Synchronous Rectifi

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Keywords - SWP16N65K MOSFET datasheet

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