SWJ8N65DB Specs and Replacement

Type Designator: SWJ8N65DB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 181 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 34 nS

Cossⓘ - Output Capacitance: 126 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.2 Ohm

Package: TO-262

SWJ8N65DB substitution

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SWJ8N65DB datasheet

 ..1. Size:1132K  samwin
 sw8n65db swi8n65db swd8n65db swf8n65db swj8n65db.pdf pdf_icon

SWJ8N65DB

SW8N65DB N-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFET Features BVDSS 650V TO-251 TO-252 TO-220F TO-262N ID 8A High ruggedness Low RDS(ON) (Typ 1.0 )@VGS=10V RDS(ON) 1.0 Low Gate Charge (Typ 34nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 1 1 1 2 2 2 2 Application LED, Charge, PC Power 3 3 3 3 1... See More ⇒

 ..2. Size:1066K  samwin
 swi8n65db swd8n65db swf8n65db swj8n65db.pdf pdf_icon

SWJ8N65DB

SW8N65DB N-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFET Features BVDSS 650V TO-251 TO-252 TO-220F TO-262N ID 8A High ruggedness Low RDS(ON) (Typ 1.0 )@VGS=10V RDS(ON) 1.0 Low Gate Charge (Typ 34nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 1 1 1 2 2 2 2 Application LED, Charger, PC Power 3 3 3 3 1 1. Gate 2. Drain ... See More ⇒

 9.1. Size:710K  samwin
 sw8n70d swf8n70d swj8n70d.pdf pdf_icon

SWJ8N65DB

SW8N70D N-channel Enhanced mode TO-220F/TO-262N MOSFET Features TO-220F TO-262N BVDSS 700V High ruggedness ID 8A Low RDS(ON) (Typ 1.0m )@VGS=10 RDS(ON) 1.0 Low Gate Charge (Typ 37nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application Electronic Ballast , Motor 3 3 Control , Synchronous Rectification, Inverter... See More ⇒

 9.2. Size:614K  samwin
 swj8n90ku.pdf pdf_icon

SWJ8N65DB

SW8N90KU N-channel Enhanced mode TO-262N MOSFET TO-262N BVDSS 900V Features ID 8A High ruggedness RDS(ON) 0.97 Low RDS(ON) (Typ 0.97 )@VGS=10V Low Gate Charge (Typ 32nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application UPS, LED, SMPS 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET... See More ⇒

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Detailed specifications: SWJ7N70D, SWF7N70D, SWF7N80D, SWU7N80D, SWJ7N80D, SWI8N65DB, SWD8N65DB, SWF8N65DB, IRFP250, SWF8N70D, SWJ8N70D, SSF60R190S2, SSP60R190S2, SSW60R190S2, SSF60R190SFD, SSP60R190SFD, SSW60R190SFD

Keywords - SWJ8N65DB MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.