SWJ8N65DB - параметры транзистора MOSFET, его аналоги, datasheet

SWJ8N65DB Datasheet (PDF)

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SW8N65DB N-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFET Features BVDSS : 650V TO-251 TO-252 TO-220F TO-262N ID : 8A High ruggedness Low RDS(ON) (Typ 1.0)@VGS=10V RDS(ON) : 1.0 Low Gate Charge (Typ 34nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 1 1 1 2 2 2 2 Application:LED, Charge, PC Power 3 3 3 3 1

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SW8N65DBN-channel Enhanced mode TO-251/TO-252 /TO-220F/TO-262N MOSFETFeatures BVDSS : 650VTO-251 TO-252TO-220F TO-262NID : 8A High ruggedness Low RDS(ON) (Typ 1.0)@VGS=10V RDS(ON) : 1.0 Low Gate Charge (Typ 34nC)2 Improved dv/dt Capability 1 100% Avalanche Tested 11 12 22 2 Application:LED, Charger, PC Power3 33 311. Gate 2. Drain

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SW8N70D N-channel Enhanced mode TO-220F/TO-262N MOSFET Features TO-220F TO-262N BVDSS : 700V High ruggedness ID : 8A Low RDS(ON) (Typ 1.0m)@VGS=10 RDS(ON) : 1.0 Low Gate Charge (Typ 37nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:Electronic Ballast , Motor 3 3 Control , Synchronous Rectification, Inverter

9.2. Size:614K samwin
swj8n90ku.pdf pdf_icon

SW8N90KU N-channel Enhanced mode TO-262N MOSFET TO-262N BVDSS : 900V Features ID : 8A High ruggedness RDS(ON) : 0.97 Low RDS(ON) (Typ 0.97)@VGS=10V Low Gate Charge (Typ 32nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: UPS, LED, SMPS 1. Gate 2. Drain 3. Source 3 General Description This power MOSFET