SSI60R260S2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SSI60R260S2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 120 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 37 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.26 Ohm
Package: TO262
SSI60R260S2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSI60R260S2 Datasheet (PDF)
ssf60r260s2 ssp60r260s2 ssi60r260s2.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R260S2Rev. 1.0Jun. 2019www.supersemi.com.cnSSF60R260S2/SSP60R260S2/SSI60R260S2600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizin
ssi60r190s2e.pdf
SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor600V Super Junction Power MOSFET Gen-SS*60R190S2ERev. 1.0Aug. 2022www.supersemi.com.cnSSI60R190S2E600V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advanced charge b
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