All MOSFET. SSU80R1K3S Datasheet

 

SSU80R1K3S MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSU80R1K3S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 4.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.5 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 88 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
   Package: TO251

 SSU80R1K3S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSU80R1K3S Datasheet (PDF)

 ..1. Size:1352K  cn super semi
 ssf80r1k3s ssp80r1k3s sst80r1k3s ssu80r1k3s.pdf

SSU80R1K3S SSU80R1K3S

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFETSS*80R1K3SRev. 2.1Jun. 2022www.supersemi.com.cnSeptember, 2013SJ-FETSSF80R1K3S/SSP80R1K3S/SST80R1K3S/SSU80R1K3S800V N-Channel MOSFETDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizi

 8.1. Size:1290K  cn super semi
 ssf80r850s ssp80r850s sst80r850s ssu80r850s.pdf

SSU80R1K3S SSU80R1K3S

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor800V Super Junction Power MOSFETSS*80R850SRev. 2.1Jun. 2022www.supersemi.com.cnSeptember, 2013SJ-FETSSF80R850S/SSP80R850S/SST80R850S/SSU80R850S 800V N-Channel MOSFETDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utiliz

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRC5305

 

 
Back to Top