SSU80R1K3S Specs and Replacement

Type Designator: SSU80R1K3S

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 19 nS

Cossⓘ - Output Capacitance: 88 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm

Package: TO251

SSU80R1K3S substitution

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SSU80R1K3S datasheet

 ..1. Size:1352K  cn super semi
ssf80r1k3s ssp80r1k3s sst80r1k3s ssu80r1k3s.pdf pdf_icon

SSU80R1K3S

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power MOSFET SS*80R1K3S Rev. 2.1 Jun. 2022 www.supersemi.com.cn September, 2013 SJ-FET SSF80R1K3S/SSP80R1K3S/SST80R1K3S/SSU80R1K3S 800V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizi... See More ⇒

 8.1. Size:1290K  cn super semi
ssf80r850s ssp80r850s sst80r850s ssu80r850s.pdf pdf_icon

SSU80R1K3S

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 800V Super Junction Power MOSFET SS*80R850S Rev. 2.1 Jun. 2022 www.supersemi.com.cn September, 2013 SJ-FET SSF80R850S/SSP80R850S/SST80R850S/SSU80R850S 800V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utiliz... See More ⇒

Detailed specifications: SSP70R650S2, SST70R650S2, SSF70R750S, SST70R750S, SSU70R750S, SSF80R1K3S, SSP80R1K3S, SST80R1K3S, 20N60, SSF80R240S, SSP80R240S, SSB80R240S, SSF80R380S, SSP80R380S, SSW80R380S, SSA80R380S, SSF80R500S

Keywords - SSU80R1K3S MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.