All MOSFET. SSP1991 Datasheet

 

SSP1991 Datasheet and Replacement


   Type Designator: SSP1991
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 223 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 28.8 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO220
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SSP1991 Datasheet (PDF)

 ..1. Size:813K  cn super semi
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SSP1991

SUPER-SEMI SUPER-MOSFET 100V Power MOSFET SSP1991 Rev. 1.0 Jun. 2019 www.supersemi.com.cn SSP1991 100V Single N-Channel Trench MOSFET Description Features The SSP1991 MOSFET uses advanced trench MOSFET technology, VDS 100V ID (at Vgs=10V) 120A that is uniquely optimized to provide the most efficient high RDS(on) (at Vgs=10V)

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: HCD60R260 | BRCS200P03DP | IRFB3004GPBF | FNK6075K | SLF8N65C | LKK47-06C5 | TSM4424CS

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