SSP1991 Specs and Replacement

Type Designator: SSP1991

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 223 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 28.8 nS

Cossⓘ - Output Capacitance: 1300 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO220

SSP1991 substitution

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SSP1991 datasheet

 ..1. Size:813K  cn super semi
 ssp1991.pdf pdf_icon

SSP1991

SUPER-SEMI SUPER-MOSFET 100V Power MOSFET SSP1991 Rev. 1.0 Jun. 2019 www.supersemi.com.cn SSP1991 100V Single N-Channel Trench MOSFET Description Features The SSP1991 MOSFET uses advanced trench MOSFET technology, VDS 100V ID (at Vgs=10V) 120A that is uniquely optimized to provide the most efficient high RDS(on) (at Vgs=10V) ... See More ⇒

Detailed specifications: SSF80R500S, SSP80R500S, SSB80R500S, SST80R500S, SSF80R850S, SSP80R850S, SST80R850S, SSU80R850S, AON6414A, SSP70R450S2, SST70R450S2, SST60R280S2, SST65R280S2, SSW20N60S, SSA20N60S, SSW47N60S, SSA47N60S

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