All MOSFET. SSP1991 Datasheet

 

SSP1991 Datasheet and Replacement


   Type Designator: SSP1991
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 223 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 120 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 28.8 nS
   Cossⓘ - Output Capacitance: 1300 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
   Package: TO220
 

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SSP1991 Datasheet (PDF)

 ..1. Size:813K  cn super semi
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SSP1991

SUPER-SEMI SUPER-MOSFET 100V Power MOSFET SSP1991 Rev. 1.0 Jun. 2019 www.supersemi.com.cn SSP1991 100V Single N-Channel Trench MOSFET Description Features The SSP1991 MOSFET uses advanced trench MOSFET technology, VDS 100V ID (at Vgs=10V) 120A that is uniquely optimized to provide the most efficient high RDS(on) (at Vgs=10V)

Datasheet: SSF80R500S , SSP80R500S , SSB80R500S , SST80R500S , SSF80R850S , SSP80R850S , SST80R850S , SSU80R850S , IRFB4110 , SSP70R450S2 , SST70R450S2 , SST60R280S2 , SST65R280S2 , SSW20N60S , SSA20N60S , SSW47N60S , SSA47N60S .

History: RF1S530SM | SSM9934GM | HRS90N75K | 2N5654 | SI5475DC | SIS332DN | SSP7480N

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