All MOSFET. SSW20N60S Datasheet

 

SSW20N60S MOSFET. Datasheet pdf. Equivalent

Type Designator: SSW20N60S

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 151 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 30 nC

Rise Time (tr): 11 nS

Drain-Source Capacitance (Cd): 370 pF

Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm

Package: TO247

SSW20N60S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSW20N60S Datasheet (PDF)

0.1. ssw20n60s ssa20n60s.pdf Size:1291K _cn_super_semi

SSW20N60S
SSW20N60S

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power Transistor SS*20N60S Rev. 1.2 May. 2018 www.supersemi.com.cn September, 2013 SJ-FET SSW20N60S/SSA20N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizing

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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