All MOSFET. SSW20N60S Datasheet

 

SSW20N60S Datasheet and Replacement


   Type Designator: SSW20N60S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 370 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
   Package: TO247
 

 SSW20N60S substitution

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SSW20N60S Datasheet (PDF)

 ..1. Size:1218K  cn super semi
 ssw20n60s ssa20n60s.pdf pdf_icon

SSW20N60S

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power Transistor SS*20N60S Rev. 1.2 May. 2018 www.supersemi.com.cn September, 2013 SJ-FET SSW20N60S/SSA20N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizing

Datasheet: SSP80R850S , SST80R850S , SSU80R850S , SSP1991 , SSP70R450S2 , SST70R450S2 , SST60R280S2 , SST65R280S2 , STP75NF75 , SSA20N60S , SSW47N60S , SSA47N60S , SSW47N60SFD , SSA47N60SFD , SSW50R100S , SSA50R100S , SSW50R100SFD .

History: IRF513 | P1503BVG

Keywords - SSW20N60S MOSFET datasheet

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