SSA20N60S MOSFET. Datasheet pdf. Equivalent
Type Designator: SSA20N60S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 151 W
Maximum Drain-Source Voltage |Vds|: 600 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4.5 V
Maximum Drain Current |Id|: 20 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 30 nC
Rise Time (tr): 11 nS
Drain-Source Capacitance (Cd): 370 pF
Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
Package: TO3P
SSA20N60S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSA20N60S Datasheet (PDF)
0.1. ssw20n60s ssa20n60s.pdf 
Size:1291K _cn_super_semi
SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power Transistor SS*20N60S Rev. 1.2 May. 2018 www.supersemi.com.cn September, 2013 SJ-FET SSW20N60S/SSA20N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizing
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