SSA20N60S Datasheet. Specs and Replacement

Type Designator: SSA20N60S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 151 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 370 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO3P

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SSA20N60S datasheet

 ..1. Size:1218K  cn super semi
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SSA20N60S

SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 600V Super Junction Power Transistor SS*20N60S Rev. 1.2 May. 2018 www.supersemi.com.cn September, 2013 SJ-FET SSW20N60S/SSA20N60S 600V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizing ... See More ⇒

Detailed specifications: SST80R850S, SSU80R850S, SSP1991, SSP70R450S2, SST70R450S2, SST60R280S2, SST65R280S2, SSW20N60S, IRF630, SSW47N60S, SSA47N60S, SSW47N60SFD, SSA47N60SFD, SSW50R100S, SSA50R100S, SSW50R100SFD, SSA50R100SFD

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