YPN438S Specs and Replacement
Type Designator: YPN438S
Type of Transistor: MOSFET
Type of Control Channel: NP-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ - Output Capacitance: 60 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: SOP8
YPN438S substitution
- MOSFET ⓘ Cross-Reference Search
YPN438S datasheet
ypn438s.pdf
Xiamen Silicon-top opto electronics Co.,Ltd. YPN 438S 40V 10A N&P-Channel Power MOSFET (2 IN 1) General Features Proprietary New Trench Technology Ultra-low Miller Charge N MOS RDS(ON),typ.=18m @V =10V GS P MOS RDS(ON),typ.=30m @V =10V GS Low Gate Charge Minimize Switching Loss Fast Recovery Body Diode... See More ⇒
Detailed specifications: SSA47N60SFD, SSW50R100S, SSA50R100S, SSW50R100SFD, SSA50R100SFD, SSW80R240S, SSA80R240S, Y2N655S, IRFP260, ASM6115, MMFTP3401, GDSSF2300, TSM10NC60CF, TSM150P04LCS, TSM2301A, TSM240N03CX, TSM60NB1R4CH
Keywords - YPN438S MOSFET specs
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