All MOSFET. YPN438S Datasheet

 

YPN438S Datasheet and Replacement


   Type Designator: YPN438S
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 12.2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.6 nS
   Cossⓘ - Output Capacitance: 60 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: SOP8
 

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YPN438S Datasheet (PDF)

 ..1. Size:1116K  cn silicon billion
 ypn438s.pdf pdf_icon

YPN438S

Xiamen Silicon-top opto electronics Co.,Ltd.YPN 438S40V 10A N&P-Channel Power MOSFET (2 IN 1)General FeaturesProprietary New Trench TechnologyUltra-low Miller ChargeN MOS RDS(ON),typ.=18m@V =10VGSP MOS RDS(ON),typ.=30m@V =10VGSLow Gate Charge Minimize Switching LossFast Recovery Body Diode

Datasheet: SSA47N60SFD , SSW50R100S , SSA50R100S , SSW50R100SFD , SSA50R100SFD , SSW80R240S , SSA80R240S , Y2N655S , 8205A , ASM6115 , MMFTP3401 , GDSSF2300 , TSM10NC60CF , TSM150P04LCS , TSM2301A , TSM240N03CX , TSM60NB1R4CH .

History: R6030ENZ1 | JFFM13N50C | JFFM10N80C | SP8007 | ME10N15 | NCEP015NH30AGU | IRF7103I

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