ASM6115 PDF and Equivalents Search

 

ASM6115 Specs and Replacement

Type Designator: ASM6115

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 52.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 35 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 23.6 nS

Cossⓘ - Output Capacitance: 224 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm

Package: TO252

ASM6115 substitution

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ASM6115 datasheet

 ..1. Size:1367K  sine micro
 asm6115.pdf pdf_icon

ASM6115

ASM6115 P-Ch 60V Fast Switching MOSFETs Super Low Gate Charge Product Summary 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench -60V 25m -35A technology TO252 Pin Configuration Description The ASM6115 is the high cell density trenched P-ch MOSFETs, which provide excellent ... See More ⇒

Detailed specifications: SSW50R100S , SSA50R100S , SSW50R100SFD , SSA50R100SFD , SSW80R240S , SSA80R240S , Y2N655S , YPN438S , 4435 , MMFTP3401 , GDSSF2300 , TSM10NC60CF , TSM150P04LCS , TSM2301A , TSM240N03CX , TSM60NB1R4CH , TSM650P03CX .

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