All MOSFET. ASM6115 Datasheet


ASM6115 MOSFET. Datasheet pdf. Equivalent

Type Designator: ASM6115

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 52.1 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 35 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 25 nC

Rise Time (tr): 23.6 nS

Drain-Source Capacitance (Cd): 224 pF

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: TO252

ASM6115 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


ASM6115 Datasheet (PDF)

0.1. asm6115.pdf Size:1367K _sine_micro


ASM6115 P-Ch 60V Fast Switching MOSFETs Super Low Gate Charge Product Summary 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench -60V 25m -35A technology TO252 Pin Configuration Description The ASM6115 is the high cell density trenched P-ch MOSFETs, which provide excellent

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