ASM6115 Datasheet and Replacement
Type Designator: ASM6115
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 52.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 23.6 nS
Cossⓘ - Output Capacitance: 224 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: TO252
ASM6115 substitution
ASM6115 Datasheet (PDF)
asm6115.pdf

ASM6115 P-Ch 60V Fast Switching MOSFETs Super Low Gate Charge Product Summary 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench -60V 25m -35A technology TO252 Pin Configuration Description The ASM6115 is the high cell density trenched P-ch MOSFETs, which provide excellent
Datasheet: SSW50R100S , SSA50R100S , SSW50R100SFD , SSA50R100SFD , SSW80R240S , SSA80R240S , Y2N655S , YPN438S , 2SK3568 , MMFTP3401 , GDSSF2300 , TSM10NC60CF , TSM150P04LCS , TSM2301A , TSM240N03CX , TSM60NB1R4CH , TSM650P03CX .
History: SISA18ADN | NTMTS0D7N06CL
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History: SISA18ADN | NTMTS0D7N06CL



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