ASM6115 MOSFET. Datasheet pdf. Equivalent
Type Designator: ASM6115
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Maximum Power Dissipation (Pd): 52.1 W
Maximum Drain-Source Voltage |Vds|: 60 V
Maximum Gate-Source Voltage |Vgs|: 20 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V
Maximum Drain Current |Id|: 35 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 25 nC
Rise Time (tr): 23.6 nS
Drain-Source Capacitance (Cd): 224 pF
Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm
Package: TO252
ASM6115 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
ASM6115 Datasheet (PDF)
0.1. asm6115.pdf 
Size:1367K _sine_micro
ASM6115 P-Ch 60V Fast Switching MOSFETs Super Low Gate Charge Product Summary 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline BVDSS RDSON ID Advanced high cell density Trench -60V 25m -35A technology TO252 Pin Configuration Description The ASM6115 is the high cell density trenched P-ch MOSFETs, which provide excellent
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