All MOSFET. GDSSF2300 Datasheet

 

GDSSF2300 Datasheet and Replacement


   Type Designator: GDSSF2300
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 2.4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 120 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOT23
 

 GDSSF2300 substitution

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GDSSF2300 Datasheet (PDF)

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GDSSF2300

GDSSF2300 DDESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation Gwith gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. SSchematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON)

Datasheet: SSW50R100SFD , SSA50R100SFD , SSW80R240S , SSA80R240S , Y2N655S , YPN438S , ASM6115 , MMFTP3401 , IRF9540N , TSM10NC60CF , TSM150P04LCS , TSM2301A , TSM240N03CX , TSM60NB1R4CH , TSM650P03CX , TSM900N06CH , TSM900N06CP .

History: ISZ019N03L5S | FQA7N80

Keywords - GDSSF2300 MOSFET datasheet

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