GDSSF2300 Specs and Replacement

Type Designator: GDSSF2300

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.9 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 2.4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 55 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT23

GDSSF2300 substitution

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GDSSF2300 datasheet

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 gdssf2300.pdf pdf_icon

GDSSF2300

GDSSF2300 D DESCRIPTION The SSF2300 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation G with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S Schematic diagram GENERAL FEATURES VDS = 20V,ID = 2.4A RDS(ON) ... See More ⇒

Detailed specifications: SSW50R100SFD, SSA50R100SFD, SSW80R240S, SSA80R240S, Y2N655S, YPN438S, ASM6115, MMFTP3401, SKD502T, TSM10NC60CF, TSM150P04LCS, TSM2301A, TSM240N03CX, TSM60NB1R4CH, TSM650P03CX, TSM900N06CH, TSM900N06CP

Keywords - GDSSF2300 MOSFET specs

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