TSM2301A Datasheet and Replacement
Type Designator: TSM2301A
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 0.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 460 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: SOT23
TSM2301A substitution
TSM2301A Datasheet (PDF)
tsm2301a.pdf

TSM2301A Taiwan Semiconductor P-Channel Power MOSFET -20V, -2.8A, 130m KEY PERFORMANCE PARAMETERS Features PARAMETER VALUE UNIT Advance Trench Process Technology VDS -20 V High Density Cell Design for Ultra Low On-resistance VGS = -4.5V 130 RDS(on) (max) m VGS = -2.5V 190 Application Qg 7.2 nC Telecom power Consumer Electronics SOT-23
tsm2301acx tsm2301cx.pdf

TSM2301 20V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 130 @ VGS = -4.5V -2.8 2. Source -20 3. Drain 190 @ VGS = -2.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Orderi
Datasheet: SSA80R240S , Y2N655S , YPN438S , ASM6115 , MMFTP3401 , GDSSF2300 , TSM10NC60CF , TSM150P04LCS , RFP50N06 , TSM240N03CX , TSM60NB1R4CH , TSM650P03CX , TSM900N06CH , TSM900N06CP , TSM900N06CW , CI28N120SM , CI30N120SM .
History: NTMFS6H864NL | NCE55P04S | WML9N90D1B | WML03N80M3 | SFG014N100BC3 | FDMQ86530L | STD15NF10T4
Keywords - TSM2301A MOSFET datasheet
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History: NTMFS6H864NL | NCE55P04S | WML9N90D1B | WML03N80M3 | SFG014N100BC3 | FDMQ86530L | STD15NF10T4



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