All MOSFET. TSM2301A Datasheet

 

TSM2301A Datasheet and Replacement


   Type Designator: TSM2301A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 2.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 460 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: SOT23
 

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TSM2301A Datasheet (PDF)

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TSM2301A

TSM2301A Taiwan Semiconductor P-Channel Power MOSFET -20V, -2.8A, 130m KEY PERFORMANCE PARAMETERS Features PARAMETER VALUE UNIT Advance Trench Process Technology VDS -20 V High Density Cell Design for Ultra Low On-resistance VGS = -4.5V 130 RDS(on) (max) m VGS = -2.5V 190 Application Qg 7.2 nC Telecom power Consumer Electronics SOT-23

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TSM2301A

TSM2301 20V P-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: VDS (V) RDS(on)(m) ID (A) 1. Gate 130 @ VGS = -4.5V -2.8 2. Source -20 3. Drain 190 @ VGS = -2.5V -2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch P-Channel MOSFET Orderi

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TSM2301A

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TSM2301A

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Datasheet: SSA80R240S , Y2N655S , YPN438S , ASM6115 , MMFTP3401 , GDSSF2300 , TSM10NC60CF , TSM150P04LCS , RFP50N06 , TSM240N03CX , TSM60NB1R4CH , TSM650P03CX , TSM900N06CH , TSM900N06CP , TSM900N06CW , CI28N120SM , CI30N120SM .

History: IPP50N12S3L-15

Keywords - TSM2301A MOSFET datasheet

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