All MOSFET. TSM900N06CH Datasheet


TSM900N06CH MOSFET. Datasheet pdf. Equivalent

Type Designator: TSM900N06CH

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 11 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 9.3 nC

Rise Time (tr): 9.5 nS

Drain-Source Capacitance (Cd): 45 pF

Maximum Drain-Source On-State Resistance (Rds): 0.09 Ohm

Package: TO251S

TSM900N06CH Transistor Equivalent Substitute - MOSFET Cross-Reference Search


TSM900N06CH Datasheet (PDF)

5.1. tsm900n06.pdf Size:502K _taiwansemi


TSM900N06 60V N-Channel Power MOSFET TO-251S TO-252 Key Parameter Performance Pin Definition: (IPAK SL) (DPAK) 1. Gate Parameter Value Unit 2. Drain 3. Source VDS 60 V VGS = 10V 90 RDS(on) (max) m VGS = 4.5V 100 Qg 9.3 nC SOT-223 Block Diagram Ordering Information Part No. Package Packing TSM900N06CH X0G TO-251S 75pcs / Tube TSM900N06CP ROG TO-252

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .


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