CI28N120SM MOSFET. Datasheet pdf. Equivalent
Type Designator: CI28N120SM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 166 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 28 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 85 nC
trⓘ - Rise Time: 60 nS
Cossⓘ - Output Capacitance: 54 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
Package: TO247
CI28N120SM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CI28N120SM Datasheet (PDF)
..1. Size:729K tokmas
ci28n120sm.pdf
ci28n120sm.pdf
N- Channel SiC Power MOSFETCI28N120SMFeatures High Blocking Voltage with Low On-ResistancePackage High Speed Switching with Low Capacitances Easy to Parallel and Simple to DriveD (2) Avalanche Ruggedness Halogen Free, RoHS CompliantG (1)Benefits Higher System Efficiency Reduced Cooling Requirements1S (3) Increased Power Density 23
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