All MOSFET. CI28N120SM Datasheet


CI28N120SM MOSFET. Datasheet pdf. Equivalent

Type Designator: CI28N120SM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 166 W

Maximum Drain-Source Voltage |Vds|: 1200 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 28 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 85 nC

Rise Time (tr): 60 nS

Drain-Source Capacitance (Cd): 54 pF

Maximum Drain-Source On-State Resistance (Rds): 0.125 Ohm

Package: TO247

CI28N120SM Transistor Equivalent Substitute - MOSFET Cross-Reference Search


CI28N120SM Datasheet (PDF)

0.1. ci28n120sm.pdf Size:729K _tokmas


N- Channel SiC Power MOSFETCI28N120SMFeatures High Blocking Voltage with Low On-ResistancePackage High Speed Switching with Low Capacitances Easy to Parallel and Simple to DriveD (2) Avalanche Ruggedness Halogen Free, RoHS CompliantG (1)Benefits Higher System Efficiency Reduced Cooling Requirements1S (3) Increased Power Density 23

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .


Back to Top