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CI28N120SM Spec and Replacement


   Type Designator: CI28N120SM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 166 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 28 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 54 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.125 Ohm
   Package: TO247

 CI28N120SM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CI28N120SM Specs

 ..1. Size:729K  tokmas
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CI28N120SM

N- Channel SiC Power MOSFET CI28N120SM Features High Blocking Voltage with Low On-Resistance Package High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive D (2) Avalanche Ruggedness Halogen Free, RoHS Compliant G (1) Benefits Higher System Efficiency Reduced Cooling Requirements 1 S (3) Increased Power Density 2 3 ... See More ⇒

Detailed specifications: TSM150P04LCS , TSM2301A , TSM240N03CX , TSM60NB1R4CH , TSM650P03CX , TSM900N06CH , TSM900N06CP , TSM900N06CW , CS150N03A8 , CI30N120SM , CI47N65 , CI60N120SM , CI72N65 , CIM3N150 , CIM6N120-220C , CIM6N120-220F , CIM6N120-247 .

History: HUFA76429D3 | TSA23N50M | PDC3902X

Keywords - CI28N120SM MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 
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