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CI60N120SM Spec and Replacement


   Type Designator: CI60N120SM
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 330 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 52 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm
   Package: TO247

 CI60N120SM Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CI60N120SM Specs

 ..1. Size:406K  tokmas
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CI60N120SM

SIC MOSFET CI60N120SM Features Package High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits TO-247-3 Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased S... See More ⇒

Detailed specifications: TSM60NB1R4CH , TSM650P03CX , TSM900N06CH , TSM900N06CP , TSM900N06CW , CI28N120SM , CI30N120SM , CI47N65 , STP80NF70 , CI72N65 , CIM3N150 , CIM6N120-220C , CIM6N120-220F , CIM6N120-247 , P7515BDB , PM5G8EA , PR804BA33 .

History: HUFA76429D3

Keywords - CI60N120SM MOSFET specs

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