CI60N120SM Datasheet. Specs and Replacement

Type Designator: CI60N120SM  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 330 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 52 nS

Cossⓘ - Output Capacitance: 150 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.052 Ohm

Package: TO247

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CI60N120SM datasheet

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CI60N120SM

SIC MOSFET CI60N120SM Features Package High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant Benefits TO-247-3 Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased S... See More ⇒

Detailed specifications: TSM60NB1R4CH, TSM650P03CX, TSM900N06CH, TSM900N06CP, TSM900N06CW, CI28N120SM, CI30N120SM, CI47N65, AON7410, CI72N65, CIM3N150, CIM6N120-220C, CIM6N120-220F, CIM6N120-247, P7515BDB, PM5G8EA, PR804BA33

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