CI60N120SM MOSFET. Datasheet pdf. Equivalent
Type Designator: CI60N120SM
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 330 W
Maximum Drain-Source Voltage |Vds|: 1200 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 60 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 115 nC
Rise Time (tr): 52 nS
Drain-Source Capacitance (Cd): 150 pF
Maximum Drain-Source On-State Resistance (Rds): 0.052 Ohm
Package: TO247
CI60N120SM Transistor Equivalent Substitute - MOSFET Cross-Reference Search
CI60N120SM Datasheet (PDF)
0.1. ci60n120sm.pdf 
Size:406K _tokmas
SIC MOSFETCI60N120SMFeatures Package High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS CompliantBenefitsTO-247-3 Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased S
Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .
