All MOSFET. CI60N120SM Datasheet


CI60N120SM MOSFET. Datasheet pdf. Equivalent

Type Designator: CI60N120SM

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 330 W

Maximum Drain-Source Voltage |Vds|: 1200 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 60 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 115 nC

Rise Time (tr): 52 nS

Drain-Source Capacitance (Cd): 150 pF

Maximum Drain-Source On-State Resistance (Rds): 0.052 Ohm

Package: TO247

CI60N120SM Transistor Equivalent Substitute - MOSFET Cross-Reference Search


CI60N120SM Datasheet (PDF)

0.1. ci60n120sm.pdf Size:406K _tokmas


SIC MOSFETCI60N120SMFeatures Package High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS CompliantBenefitsTO-247-3 Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased S

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