All MOSFET. CIM3N150 Datasheet

 

CIM3N150 Datasheet and Replacement


   Type Designator: CIM3N150
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO247
 

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CIM3N150 Datasheet (PDF)

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CIM3N150

1500V N-Channel MOSFETV NCIM3N150General Description This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Gperformance, and withstand high energy pulse in the DSavalanche and commutation mode. TO-247-3These devices can be used in var

Datasheet: TSM900N06CH , TSM900N06CP , TSM900N06CW , CI28N120SM , CI30N120SM , CI47N65 , CI60N120SM , CI72N65 , 13N50 , CIM6N120-220C , CIM6N120-220F , CIM6N120-247 , P7515BDB , PM5G8EA , PR804BA33 , QM0005D , QN4103M6N .

History: STH60N10

Keywords - CIM3N150 MOSFET datasheet

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