All MOSFET. CIM3N150 Datasheet

 

CIM3N150 MOSFET. Datasheet pdf. Equivalent


   Type Designator: CIM3N150
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id|ⓘ - Maximum Drain Current: 3 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.3 nC
   trⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 104 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
   Package: TO247

 CIM3N150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

CIM3N150 Datasheet (PDF)

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 cim3n150.pdf

CIM3N150 CIM3N150

1500V N-Channel MOSFETV NCIM3N150General Description This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Gperformance, and withstand high energy pulse in the DSavalanche and commutation mode. TO-247-3These devices can be used in var

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: STW46NF30 | US6U37

 

 
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