CIM3N150 Specs and Replacement
Type Designator: CIM3N150
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 17 nS
Cossⓘ - Output Capacitance: 104 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8 Ohm
Package: TO247
CIM3N150 substitution
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CIM3N150 datasheet
cim3n150.pdf
1500V N-Channel MOSFET V N CIM3N150 General Description This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching G performance, and withstand high energy pulse in the D S avalanche and commutation mode. TO-247-3 These devices can be used in var... See More ⇒
Detailed specifications: TSM900N06CH , TSM900N06CP , TSM900N06CW , CI28N120SM , CI30N120SM , CI47N65 , CI60N120SM , CI72N65 , TK10A60D , CIM6N120-220C , CIM6N120-220F , CIM6N120-247 , P7515BDB , PM5G8EA , PR804BA33 , QM0005D , QN4103M6N .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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