All MOSFET. CIM3N150 Datasheet


CIM3N150 MOSFET. Datasheet pdf. Equivalent

Type Designator: CIM3N150

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 83 W

Maximum Drain-Source Voltage |Vds|: 1500 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 3 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 9.3 nC

Rise Time (tr): 17 nS

Drain-Source Capacitance (Cd): 104 pF

Maximum Drain-Source On-State Resistance (Rds): 8 Ohm

Package: TO247

CIM3N150 Transistor Equivalent Substitute - MOSFET Cross-Reference Search


CIM3N150 Datasheet (PDF)

0.1. cim3n150.pdf Size:1342K _tokmas


1500V N-Channel MOSFETV NCIM3N150General Description This Power MOSFET is produced using advanced self-aligned planar technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Gperformance, and withstand high energy pulse in the DSavalanche and commutation mode. TO-247-3These devices can be used in var

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