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P7515BDB Specs and Replacement

Type Designator: P7515BDB

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 19 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 74 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: TO252

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P7515BDB datasheet

 ..1. Size:809K  unikc
 p7515bdb.pdf pdf_icon

P7515BDB

P7515BDB N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 75m @VGS = 10V 150V 19A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage 20 TC = 25 C 19 ID Continuous Drain Current TC = 100 C 11.7 A IDM 57 Pulsed Drain Curr... See More ⇒

Detailed specifications: CI30N120SM, CI47N65, CI60N120SM, CI72N65, CIM3N150, CIM6N120-220C, CIM6N120-220F, CIM6N120-247, IRFP250, PM5G8EA, PR804BA33, QM0005D, QN4103M6N, ISCNH310P, ISCNH320K, ISCNH325W, ISCNH327P

Keywords - P7515BDB MOSFET specs

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