All MOSFET. PM5G8EA Datasheet

 

PM5G8EA MOSFET. Datasheet pdf. Equivalent


   Type Designator: PM5G8EA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5.7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 7.3 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 81 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm
   Package: SOT23

 PM5G8EA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PM5G8EA Datasheet (PDF)

 ..1. Size:766K  unikc
 pm5g8ea.pdf

PM5G8EA PM5G8EA

PM5G8EAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID22.5m @VGS = 4.5V20V 5.7ASOT-23(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 8 VTA = 25 C5.7IDContinuous Drain CurrentTA = 70 AC4.5IDM16Pulsed Drain Current1TA = 25 C1.25PD

 ..2. Size:774K  niko-sem
 pm5g8ea.pdf

PM5G8EA PM5G8EA

N-Channel Enhancement Mode PM5G8EA NIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 22.5m 5.7A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products Inte

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