All MOSFET. PM5G8EA Datasheet

 

PM5G8EA MOSFET. Datasheet pdf. Equivalent

Type Designator: PM5G8EA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 1.25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Gate-Source Voltage |Vgs|: 8 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1 V

Maximum Drain Current |Id|: 5.7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 7.3 nC

Rise Time (tr): 18 nS

Drain-Source Capacitance (Cd): 81 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0225 Ohm

Package: SOT23

PM5G8EA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PM5G8EA Datasheet (PDF)

0.1. pm5g8ea.pdf Size:766K _unikc

PM5G8EA
PM5G8EA

PM5G8EAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID22.5m @VGS = 4.5V20V 5.7ASOT-23(S)ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 8 VTA = 25 C5.7IDContinuous Drain CurrentTA = 70 AC4.5IDM16Pulsed Drain Current1TA = 25 C1.25PD

Datasheet: IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC , IRFP3710 , J111 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP441 , IRFP442 , IRFP443 .

 

 
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