PM5G8EA MOSFET Datasheet: N-Ch, 20V, 5.7A. Full specification with pinout and replacement list

PM5G8EA Specs and Replacement

Type Designator: PM5G8EA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 5.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 81 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0225 Ohm

Package: SOT23

PM5G8EA substitution

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PM5G8EA datasheet

..1. Size:766K unikc
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PM5G8EA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 22.5m @VGS = 4.5V 20V 5.7A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 8 V TA = 25 C 5.7 ID Continuous Drain Current TA = 70 A C 4.5 IDM 16 Pulsed Drain Current1 TA = 25 C 1.25 PD ... See More ⇒

..2. Size:774K niko-sem
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N-Channel Enhancement Mode PM5G8EA NIKO-SEM SOT-23(S) Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20V 22.5m 5.7A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Products Inte... See More ⇒

Detailed specifications: CI47N65, CI60N120SM, CI72N65, CIM3N150, CIM6N120-220C, CIM6N120-220F, CIM6N120-247, P7515BDB, IRF1407, PR804BA33, QM0005D, QN4103M6N, ISCNH310P, ISCNH320K, ISCNH325W, ISCNH327P, ISCNH328W