All MOSFET. QN4103M6N Datasheet

 

QN4103M6N Datasheet and Replacement


   Type Designator: QN4103M6N
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 255 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 45.2 nS
   Cossⓘ - Output Capacitance: 996 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: PRPAK5X6
 

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QN4103M6N Datasheet (PDF)

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QN4103M6N

uPI SEMI www.upi-semi.com Power Solutions for TODAY and TOMORROW IS NOW PART OF Please visit our website for more information: www.upi-semi.com The contents of this document are provided in connection with uPI Semiconductor Corp. (uPI) products. uPI makes no representations or warranties with respect to the accuracy or completeness of the contents of this publication and res

Datasheet: CIM3N150 , CIM6N120-220C , CIM6N120-220F , CIM6N120-247 , P7515BDB , PM5G8EA , PR804BA33 , QM0005D , 13N50 , ISCNH310P , ISCNH320K , ISCNH325W , ISCNH327P , ISCNH328W , ISCNH339D , ISCNH340B , ISCNH342P .

History: LTP70N06 | IXFA130N10T2

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