QN4103M6N Specs and Replacement
Type Designator: QN4103M6N
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 156 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 255 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 45.2 nS
Cossⓘ - Output Capacitance: 996 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: PRPAK5X6
QN4103M6N substitution
- MOSFET ⓘ Cross-Reference Search
QN4103M6N datasheet
qn4103m6n.pdf
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Detailed specifications: CIM3N150, CIM6N120-220C, CIM6N120-220F, CIM6N120-247, P7515BDB, PM5G8EA, PR804BA33, QM0005D, 5N60, ISCNH310P, ISCNH320K, ISCNH325W, ISCNH327P, ISCNH328W, ISCNH339D, ISCNH340B, ISCNH342P
Keywords - QN4103M6N MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: APM9430
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