ISCPL322D Specs and Replacement
Type Designator: ISCPL322D
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 45 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
Package: TO252
ISCPL322D substitution
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ISCPL322D datasheet
iscpl322d.pdf
isc P-Channel MOSFET Transistor ISCPL322D FEATURES Drain Current I = -17A@ T =25 D C Drain Source Voltage- V = -100V(Min) DSS Static Drain-Source On-Resistance R = 200m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒
Detailed specifications: ISCNH339D, ISCNH340B, ISCNH342P, ISCNH342W, ISCNH345P, ISCNH346F, ISCNL343D, ISCNL344D, AO3400A, IXFH60N60X2A, MN7R6-60PS, STH80N10LF7-2AG, VP2320N1, VIS30019, VIS30023, VIS30024, VS3P07C
Keywords - ISCPL322D MOSFET specs
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History: WSD4066DN
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