All MOSFET. VP2320N1 Datasheet

 

VP2320N1 Datasheet and Replacement


   Type Designator: VP2320N1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm
   Package: TO3
 

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VP2320N1 Datasheet (PDF)

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VP2320N1

isc P-Channel MOSFET Transistor VP2320N1FEATURESDrain Current : I = -15A@ T =25D CDrain Source Voltage: V = -200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.4(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

Datasheet: ISCNH345P , ISCNH346F , ISCNL343D , ISCNL344D , ISCPL322D , IXFH60N60X2A , MN7R6-60PS , STH80N10LF7-2AG , MMIS60R580P , VIS30019 , VIS30023 , VIS30024 , VS3P07C , WMB128N10T2 , WML07N80M3 , WMM07N80M3 , WMO07N80M3 .

History: SI7N65F

Keywords - VP2320N1 MOSFET datasheet

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