VP2320N1 PDF and Equivalents Search

 

VP2320N1 Specs and Replacement

Type Designator: VP2320N1

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.4 Ohm

Package: TO3

VP2320N1 substitution

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VP2320N1 datasheet

 ..1. Size:251K  inchange semiconductor
 vp2320n1.pdf pdf_icon

VP2320N1

isc P-Channel MOSFET Transistor VP2320N1 FEATURES Drain Current I = -15A@ T =25 D C Drain Source Voltage V = -200V(Min) DSS Static Drain-Source On-Resistance R = 0.4 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ... See More ⇒

Detailed specifications: ISCNH345P, ISCNH346F, ISCNL343D, ISCNL344D, ISCPL322D, IXFH60N60X2A, MN7R6-60PS, STH80N10LF7-2AG, 7N60, VIS30019, VIS30023, VIS30024, VS3P07C, WMB128N10T2, WML07N80M3, WMM07N80M3, WMO07N80M3

Keywords - VP2320N1 MOSFET specs

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