VS3P07C MOSFET. Datasheet pdf. Equivalent
Type Designator: VS3P07C
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 37 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 28 nC
trⓘ - Rise Time: 20 nS
Cossⓘ - Output Capacitance: 415 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
Package: DFN3X3
VS3P07C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS3P07C Datasheet (PDF)
vs3p07c.pdf
VS3P07CP-Channel Enhancement Mode Field Effect TransistorFEATURESD-30V, -37A, RDS(ON) = 10m @VGS = -10V.RDS(ON) = 15m @VGS = -4.5V.Super High dense cell design for extremely low RDS(ON).GHigh power and current handing capability.Lead-free plating ; RoHS compliant.S 8 7 6 5Bottom View4 3 2 1DFN3*3 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
LIST
Last Update
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100