VS3P07C PDF and Equivalents Search

 

VS3P07C Specs and Replacement

Type Designator: VS3P07C

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 37 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 20 nS

Cossⓘ - Output Capacitance: 415 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm

Package: DFN3X3

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VS3P07C datasheet

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VS3P07C

VS3P07C P-Channel Enhancement Mode Field Effect Transistor FEATURES D -30V, -37A, RDS(ON) = 10m @VGS = -10V. RDS(ON) = 15m @VGS = -4.5V. Super High dense cell design for extremely low RDS(ON). G High power and current handing capability. Lead-free plating ; RoHS compliant. S 8 7 6 5 Bottom View 4 3 2 1 DFN3*3 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise ... See More ⇒

Detailed specifications: ISCPL322D, IXFH60N60X2A, MN7R6-60PS, STH80N10LF7-2AG, VP2320N1, VIS30019, VIS30023, VIS30024, IRLB3034, WMB128N10T2, WML07N80M3, WMM07N80M3, WMO07N80M3, WMP07N80M3, WMK07N80M3, WMN07N80M3, WML26N60C4

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