All MOSFET. VS3P07C Datasheet

 

VS3P07C Datasheet and Replacement


   Type Designator: VS3P07C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 37 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 415 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: DFN3X3
 

 VS3P07C substitution

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VS3P07C Datasheet (PDF)

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VS3P07C

VS3P07CP-Channel Enhancement Mode Field Effect TransistorFEATURESD-30V, -37A, RDS(ON) = 10m @VGS = -10V.RDS(ON) = 15m @VGS = -4.5V.Super High dense cell design for extremely low RDS(ON).GHigh power and current handing capability.Lead-free plating ; RoHS compliant.S 8 7 6 5Bottom View4 3 2 1DFN3*3 ABSOLUTE MAXIMUM RATINGS TA = 25 C unless otherwise

Datasheet: ISCPL322D , IXFH60N60X2A , MN7R6-60PS , STH80N10LF7-2AG , VP2320N1 , VIS30019 , VIS30023 , VIS30024 , 60N06 , WMB128N10T2 , WML07N80M3 , WMM07N80M3 , WMO07N80M3 , WMP07N80M3 , WMK07N80M3 , WMN07N80M3 , WML26N60C4 .

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