WFF2N65L MOSFET Datasheet: N-Ch, 650V, 2A. Full specification with pinout and replacement list

WFF2N65L Specs and Replacement

   Type Designator: WFF2N65L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 32 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 5 Ohm
   Package: TO220F

WFF2N65L substitution

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WFF2N65L datasheet

..1. Size:214K winsemi
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WFF2N65L Product Description Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features D 2.0A,650V,R (Max5.0 )@V =10V DS(on) GS Ultra-low Gate charge(Typical 8.6nC) Fast Switching Capability G 100%Avalanche Tested Maximum Junction Temperature Range(150 ) S General Description This Power MOSFET is produced... See More ⇒

7.1. Size:785K winsemi
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WFF2N65 WFF2N65 WFF2N65 WFF2N65 Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 2A,650V(Type),R (Max 5 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 9.0nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC) ISO Maximum Junction Temperature Range(150 ) Halog... See More ⇒

7.2. Size:537K winsemi
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WFF2N65B WFF2N65B WFF2N65B WFF2N65B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 2A,650V(Type),R (Max 5 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 9.0nC) Fast Switching Capability 100%Avalanche Tested Isolation Voltage(V =4000V AC) ISO Maximum Junction Temperature Range(150 ) Gener... See More ⇒

8.1. Size:613K winsemi
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WFF2N60B WFF2N60B WFF2N60B WFF2N60B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 2A,600V,R (Max 5.0 )@V =10V DS(on) GS Ultra-low Gate Charge(Typical 9nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produced u... See More ⇒