WFJ5N65B Specs and Replacement
Type Designator: WFJ5N65B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 49 nS
Cossⓘ - Output Capacitance: 95 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
Package: TO262
WFJ5N65B substitution
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WFJ5N65B datasheet
wfj5n65b.pdf
WFJ5N65B WFJ5N65B WFJ5N65B WFJ5N65B Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Silicon N-Channel MOSFET Features 4.5A,650V,R (Max2.5 )@V =10V DS(on) GS Ultra-low Gate charge(Typical13.3nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150 ) General Description This Power MOSFET is produce... See More ⇒
Detailed specifications: WMN28N60C4, WMM28N60C4, WMJ28N60C4, WFD2N65L, WFD7N65L, WFF2N65L, WFF5N65L, WFF8N65L, AO3400, WFU2N65L, WTM2300, WTM2301, WTM2302, WTM2305, WTM2306, WTM3400, WTM3401
Keywords - WFJ5N65B MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: WML08N80M3 | BRD630
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