All MOSFET. WFJ5N65B Datasheet

 

WFJ5N65B Datasheet and Replacement


   Type Designator: WFJ5N65B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 49 nS
   Cossⓘ - Output Capacitance: 95 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.5 Ohm
   Package: TO262
 

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WFJ5N65B Datasheet (PDF)

 ..1. Size:654K  winsemi
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WFJ5N65B

WFJ5N65BWFJ5N65BWFJ5N65BWFJ5N65BSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETSilicon N-Channel MOSFETFeatures 4.5A,650V,R (Max2.5)@V =10VDS(on) GS Ultra-low Gate charge(Typical13.3nC) Fast Switching Capability 100%Avalanche Tested Maximum Junction Temperature Range(150)General DescriptionThis Power MOSFET is produce

Datasheet: WMN28N60C4 , WMM28N60C4 , WMJ28N60C4 , WFD2N65L , WFD7N65L , WFF2N65L , WFF5N65L , WFF8N65L , IRF3710 , WFU2N65L , WTM2300 , WTM2301 , WTM2302 , WTM2305 , WTM2306 , WTM3400 , WTM3401 .

History: SI4N60-TM3-T | PTS2017

Keywords - WFJ5N65B MOSFET datasheet

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