TX15N10B Specs and Replacement
Type Designator: TX15N10B
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 58 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
Package: TO252
TX15N10B substitution
- MOSFET ⓘ Cross-Reference Search
TX15N10B datasheet
tx15n10b.pdf
TX15N10B N channel 100V MOSFET Description Features The TX15N10B is the N-Channel logic enhancement VDS 100V mode power field effect transistorsare produced using high cell RDS(on)Max. 100m density, DMOS trench technology.This high density process ID 15A isespecially tailored to minimize on-state resistance.These devices are particularly suited for lowvoltage application such Sup... See More ⇒
Detailed specifications: WTM2300, WTM2301, WTM2302, WTM2305, WTM2306, WTM3400, WTM3401, WTM3415, IRFP250N, TX40N06B, TX50N06, XG65T125PS1B, XG65T230PS1B, XGP6508B, XGP6510B, YWNM6001, 2N7002AK
Keywords - TX15N10B MOSFET specs
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