All MOSFET. TX15N10B Datasheet

 

TX15N10B Datasheet and Replacement


   Type Designator: TX15N10B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO252
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TX15N10B Datasheet (PDF)

 ..1. Size:1154K  xds
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TX15N10B

TX15N10BN channel 100V MOSFETDescription FeaturesThe TX15N10B is the N-Channel logic enhancementVDS 100Vmode power field effect transistorsare produced using high cellRDS(on)Max. 100mdensity, DMOS trench technology.This high density processID 15Aisespecially tailored to minimize on-state resistance.Thesedevices are particularly suited for lowvoltage application such Sup

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History: MTB15P04J3 | KP502A | WFF830 | UF640G-TF1-T | 2SK3093LS | AS3400 | MX2N4856

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