All MOSFET. TX15N10B Datasheet

 

TX15N10B Datasheet and Replacement


   Type Designator: TX15N10B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 15 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO252
 

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TX15N10B Datasheet (PDF)

 ..1. Size:1154K  xds
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TX15N10B

TX15N10BN channel 100V MOSFETDescription FeaturesThe TX15N10B is the N-Channel logic enhancementVDS 100Vmode power field effect transistorsare produced using high cellRDS(on)Max. 100mdensity, DMOS trench technology.This high density processID 15Aisespecially tailored to minimize on-state resistance.Thesedevices are particularly suited for lowvoltage application such Sup

Datasheet: WTM2300 , WTM2301 , WTM2302 , WTM2305 , WTM2306 , WTM3400 , WTM3401 , WTM3415 , AON7408 , TX40N06B , TX50N06 , XG65T125PS1B , XG65T230PS1B , XGP6508B , XGP6510B , YWNM6001 , 2N7002AK .

History: SWI4N70K | K1109 | SWI4N65DC | SSF4015 | HYG065N15NS1B6 | IRLIZ44NPBF | HYG065N07NS1B

Keywords - TX15N10B MOSFET datasheet

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