All MOSFET. TX15N10B Datasheet

 

TX15N10B MOSFET. Datasheet pdf. Equivalent


   Type Designator: TX15N10B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 34.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 15 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 58 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1 Ohm
   Package: TO252

 TX15N10B Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

TX15N10B Datasheet (PDF)

 ..1. Size:1154K  xds
 tx15n10b.pdf

TX15N10B TX15N10B

TX15N10BN channel 100V MOSFETDescription FeaturesThe TX15N10B is the N-Channel logic enhancementVDS 100Vmode power field effect transistorsare produced using high cellRDS(on)Max. 100mdensity, DMOS trench technology.This high density processID 15Aisespecially tailored to minimize on-state resistance.Thesedevices are particularly suited for lowvoltage application such Sup

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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