All MOSFET. TX40N06B Datasheet

 

TX40N06B Datasheet and Replacement


   Type Designator: TX40N06B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 35 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 11 nS
   Cossⓘ - Output Capacitance: 1725 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.025(typ) Ohm
   Package: TO252
 

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TX40N06B Datasheet (PDF)

 ..1. Size:1932K  xds
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TX40N06B

TX40N06BN-Channel 60-V (D-S) MOSFETFE ATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ( )ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.025 at VGS = 10 V 3560 81 nC0.030 at VGS = 4.5 V 32APPLICAT IONSD OR-ing ServerTO-252 DC/DCGG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RAT

Datasheet: WTM2301 , WTM2302 , WTM2305 , WTM2306 , WTM3400 , WTM3401 , WTM3415 , TX15N10B , 7N65 , TX50N06 , XG65T125PS1B , XG65T230PS1B , XGP6508B , XGP6510B , YWNM6001 , 2N7002AK , 2310 .

History: 2SK1991 | PQ6X6JN | IRL510SPBF | G1818 | HIRF730F | WMO08N80M3 | SML20S56

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