All MOSFET. XG65T125PS1B Datasheet

 

XG65T125PS1B Datasheet and Replacement


   Type Designator: XG65T125PS1B
   Type of Transistor: GaN
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 50 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO220
 

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XG65T125PS1B Datasheet (PDF)

 ..1. Size:1733K  cn xinguan
 xg65t125ps1b.pdf pdf_icon

XG65T125PS1B

XG65T125PS1B650V GaN Power Transistor (FET)Features Easy to use, compatible with standard gate drivers Product Summary Low Q , no free-wheeling diode required V 650 Vrr DSS Excellent Q x R product (FOM) R 125 mg DS(on) DS(on), typ Low switching lossQ 12.5 nCG, typ RoHS compliant and Halogen-freeQ 38 nCRR, typApplications Power adapters Tele

 9.1. Size:2046K  cn xinguan
 xg65t230ps1b.pdf pdf_icon

XG65T125PS1B

XG65T230PS1B650V GaN Power Transistor (FET)Features Easy to use, compatible with standard gate drivers Product Summary Low Q , no free-wheeling diode required V 650 Vrr DSS Excellent Q x R product (FOM) R 230 mg DS(on) DS(on), typ Low switching lossQ 12.5 nCG, typ RoHS compliant and Halogen-freeQ 38 nCRR, typApplications Power adapters Tele

Datasheet: WTM2305 , WTM2306 , WTM3400 , WTM3401 , WTM3415 , TX15N10B , TX40N06B , TX50N06 , 2N7000 , XG65T230PS1B , XGP6508B , XGP6510B , YWNM6001 , 2N7002AK , 2310 , 3407 , SPA22N65G .

History: HRLD250N10K | TK6A53D | IRFH5300 | WMB060N10LGS | AUIRLR3705Z | IRFPF40 | MS23N36

Keywords - XG65T125PS1B MOSFET datasheet

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