XG65T125PS1B GaN Datasheet: N-Ch, 650V, 23A. Full specification with pinout and replacement list

XG65T125PS1B Specs and Replacement

Type Designator: XG65T125PS1B

Type of Transistor: GaN

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 100 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 23 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 50 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO220

XG65T125PS1B substitution

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XG65T125PS1B datasheet

..1. Size:1733K cn xinguan
xg65t125ps1b.pdf pdf_icon

XG65T125PS1B 650V GaN Power Transistor (FET) Features Easy to use, compatible with standard gate drivers Product Summary Low Q , no free-wheeling diode required V 650 V rr DSS Excellent Q x R product (FOM) R 125 m g DS(on) DS(on), typ Low switching loss Q 12.5 nC G, typ RoHS compliant and Halogen-free Q 38 nC RR, typ Applications Power adapters Tele... See More ⇒

9.1. Size:2046K cn xinguan
xg65t230ps1b.pdf pdf_icon

XG65T230PS1B 650V GaN Power Transistor (FET) Features Easy to use, compatible with standard gate drivers Product Summary Low Q , no free-wheeling diode required V 650 V rr DSS Excellent Q x R product (FOM) R 230 m g DS(on) DS(on), typ Low switching loss Q 12.5 nC G, typ RoHS compliant and Halogen-free Q 38 nC RR, typ Applications Power adapters Tele... See More ⇒

Detailed specifications: WTM2305, WTM2306, WTM3400, WTM3401, WTM3415, TX15N10B, TX40N06B, TX50N06, AON7408, XG65T230PS1B, XGP6508B, XGP6510B, YWNM6001, 2N7002AK, 2310, 3407, SPA22N65G