XG65T125PS1B Datasheet and Replacement
Type Designator: XG65T125PS1B
Type of Transistor: GaN
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 100 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 23 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 50 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
Package: TO220
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XG65T125PS1B Datasheet (PDF)
xg65t125ps1b.pdf

XG65T125PS1B650V GaN Power Transistor (FET)Features Easy to use, compatible with standard gate drivers Product Summary Low Q , no free-wheeling diode required V 650 Vrr DSS Excellent Q x R product (FOM) R 125 mg DS(on) DS(on), typ Low switching lossQ 12.5 nCG, typ RoHS compliant and Halogen-freeQ 38 nCRR, typApplications Power adapters Tele
xg65t230ps1b.pdf

XG65T230PS1B650V GaN Power Transistor (FET)Features Easy to use, compatible with standard gate drivers Product Summary Low Q , no free-wheeling diode required V 650 Vrr DSS Excellent Q x R product (FOM) R 230 mg DS(on) DS(on), typ Low switching lossQ 12.5 nCG, typ RoHS compliant and Halogen-freeQ 38 nCRR, typApplications Power adapters Tele
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: BLM30DN06L-E | HLML6401 | NTD2955G | WMO14N70C4 | FDB8832 | NTMS4800NR2G | AP85T03GH-HF
Keywords - XG65T125PS1B MOSFET datasheet
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History: BLM30DN06L-E | HLML6401 | NTD2955G | WMO14N70C4 | FDB8832 | NTMS4800NR2G | AP85T03GH-HF



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