XGP6508B PDF and Equivalents Search

 

XGP6508B Specs and Replacement

Type Designator: XGP6508B

Type of Transistor: GaN

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm

Package: TO220

XGP6508B substitution

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XGP6508B datasheet

 ..1. Size:1452K  cn xinguan
 xgp6508b.pdf pdf_icon

XGP6508B

XGP6508B 650V GaN Power Transistor (FET) Features Easy to use, compatible with standard gate drivers Product Summary Low Q , no free-wheeling diode required V 650 V rr DSS Excellent Q x R product (FOM) R 150 m g DS(on) DS(on),max Low switching loss Q 22 nC G Typ RoHS compliant and Halogen-free Q 65 nC RR Typ Applications Telecom and datacom Industri... See More ⇒

 9.1. Size:1597K  cn xinguan
 xgp6510b.pdf pdf_icon

XGP6508B

XGP6510B 650V GaN Power Transistor (FET) Features Easy to use, compatible with standard gate drivers Product Summary Low Q , no free-wheeling diode required V 650 V rr DSS Excellent gate charge x R product (FOM) R 150 m DS(on) DS(on),max Low switching loss Q 21 nC G Typ RoHS compliant and Halogen-free Q 42 nC rr Typ Applications Telecom and datacom ... See More ⇒

Detailed specifications: WTM3400, WTM3401, WTM3415, TX15N10B, TX40N06B, TX50N06, XG65T125PS1B, XG65T230PS1B, STP75NF75, XGP6510B, YWNM6001, 2N7002AK, 2310, 3407, SPA22N65G, SPA24N50G, SPA65R38G

Keywords - XGP6508B MOSFET specs

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