All MOSFET. XGP6508B Datasheet

 

XGP6508B Datasheet and Replacement


   Type Designator: XGP6508B
   Type of Transistor: GaN
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 21 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 55 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO220
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XGP6508B Datasheet (PDF)

 ..1. Size:1452K  cn xinguan
 xgp6508b.pdf pdf_icon

XGP6508B

XGP6508B650V GaN Power Transistor (FET)Features Easy to use, compatible with standard gate drivers Product Summary Low Q , no free-wheeling diode required V 650 Vrr DSS Excellent Q x R product (FOM) R 150 mg DS(on) DS(on),max Low switching lossQ 22 nCG Typ RoHS compliant and Halogen-freeQ 65 nCRR TypApplications Telecom and datacom Industri

 9.1. Size:1597K  cn xinguan
 xgp6510b.pdf pdf_icon

XGP6508B

XGP6510B650V GaN Power Transistor (FET)Features Easy to use, compatible with standard gate drivers Product Summary Low Q , no free-wheeling diode required V 650 Vrr DSS Excellent gate charge x R product (FOM) R 150 mDS(on) DS(on),max Low switching lossQ 21 nCG Typ RoHS compliant and Halogen-freeQ 42 nCrr TypApplications Telecom and datacom

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History: CST08N50D | WMM07N65C4 | NP180N04TUJ | APT10021JFLL | SM4186T9RL | SSW65R190S2 | NCE30P12BS

Keywords - XGP6508B MOSFET datasheet

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