All MOSFET. XGP6510B Datasheet

 

XGP6510B Datasheet and Replacement


   Type Designator: XGP6510B
   Type of Transistor: GaN
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 100 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 19 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.15 Ohm
   Package: TO220
 

 XGP6510B substitution

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XGP6510B Datasheet (PDF)

 ..1. Size:1597K  cn xinguan
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XGP6510B

XGP6510B650V GaN Power Transistor (FET)Features Easy to use, compatible with standard gate drivers Product Summary Low Q , no free-wheeling diode required V 650 Vrr DSS Excellent gate charge x R product (FOM) R 150 mDS(on) DS(on),max Low switching lossQ 21 nCG Typ RoHS compliant and Halogen-freeQ 42 nCrr TypApplications Telecom and datacom

 9.1. Size:1452K  cn xinguan
 xgp6508b.pdf pdf_icon

XGP6510B

XGP6508B650V GaN Power Transistor (FET)Features Easy to use, compatible with standard gate drivers Product Summary Low Q , no free-wheeling diode required V 650 Vrr DSS Excellent Q x R product (FOM) R 150 mg DS(on) DS(on),max Low switching lossQ 22 nCG Typ RoHS compliant and Halogen-freeQ 65 nCRR TypApplications Telecom and datacom Industri

Datasheet: WTM3401 , WTM3415 , TX15N10B , TX40N06B , TX50N06 , XG65T125PS1B , XG65T230PS1B , XGP6508B , K4145 , YWNM6001 , 2N7002AK , 2310 , 3407 , SPA22N65G , SPA24N50G , SPA65R38G , SPA65R72G .

History: SI2323DDS-T1-GE3 | STD30NF03L | UTT150N03 | LS4119 | APT10035B2LL

Keywords - XGP6510B MOSFET datasheet

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