YWNM6001 PDF and Equivalents Search

 

YWNM6001 Specs and Replacement

Type Designator: YWNM6001

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.32 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.4 nS

Cossⓘ - Output Capacitance: 3 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm

Package: SOT23

YWNM6001 substitution

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YWNM6001 datasheet

 ..1. Size:579K  cn yenji elec
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YWNM6001

YWNM6001 SOT-23 Small Signal MOSFET 380 mAmps, 60 Volts N Channel 1. FEATURES We declare that the material of product compliance with RoHS requirements and Halogen Free. S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable. ESD Protected 2. DEVICE MARKING AND ORDERING INFORMATION... See More ⇒

Detailed specifications: WTM3415, TX15N10B, TX40N06B, TX50N06, XG65T125PS1B, XG65T230PS1B, XGP6508B, XGP6510B, IRF9540N, 2N7002AK, 2310, 3407, SPA22N65G, SPA24N50G, SPA65R38G, SPA65R72G, SPC10N65G

Keywords - YWNM6001 MOSFET specs

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