YWNM6001 MOSFET. Datasheet pdf. Equivalent
Type Designator: YWNM6001
Marking Code: RK
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 0.32 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 3.4 nS
Cossⓘ - Output Capacitance: 3 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.3 Ohm
Package: SOT23
YWNM6001 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
YWNM6001 Datasheet (PDF)
ywnm6001.pdf
YWNM6001SOT-23Small Signal MOSFET380 mAmps, 60 Volts NChannel 1. FEATURESWe declare that the material of product compliance withRoHS requirements and Halogen Free.S- prefix for automotive and other applications requiring unique site and control change requirements; AEC-Q101 qualified and PPAP capable.ESD Protected2. DEVICE MARKING AND ORDERING INFORMATION
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: 30N20A | BSC084P03NS3G | SUP85N15-21
History: 30N20A | BSC084P03NS3G | SUP85N15-21
LIST
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918