2310 Datasheet and Replacement

2310 MOSFET(N-Channel)SOT-23 V(BR)DSS RDS(ON)MAX ID105m@10VSOT-23 Plastic-Encapsulate MOSFET60V 3A125m@4.5V FeaturesSOT-23 TrenchFET Power MOSFET Load Switch for Portable Devices. DC/DC Converter. Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Package. UL Epoxy

ST2310HIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY ( > 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS3APPLICATIONS: 2 HORIZONTAL DEFLECTION FOR1MONITORS 15" AND HIGH END TVSISOWATT218DESCRIPTION The device is manu

ST2310DHIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS: 1 HORIZONTAL DEFLECTION HIGH END TVSISOWATT218DESCRIPTION The devi

PD - 9.1275PRELIMINARY IRL2310HEXFET Power MOSFETAdvanced Process TechnologyUltra Low On-ResistanceVDSS = 100VDynamic dv/dt RatingRepetitive Avalanche RatedRDS(on) = 0.040Logic-Level Gate DriveRDS(on) Specified at VGS= 4.5V & 10V175C Operating TemperatureID = 40ADescriptionFourth Generation HEXFETs from International Rectifier utilize advancedprocessing tech

MD2310FXHigh voltage NPN power transistor forstandard definition CRT displayFeatures State-of-the-art technology: diffused collector enhanced generation Stable performance versus operating temperature variation Low base drive requirement32 Tight hFE range at operating collector current1 Fully insulated power package U.L. compliantTO-3PFAppli

ST2310DHIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS: 1 HORIZONTAL DEFLECTION HIGH END TVSISOWATT218DESCRIPTION The devi

RN2310,RN2311 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) RN2310,RN2311 Unit: mmSwitching, Inverter Circuit, Interface Circuit And Driver Circuit Applications With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN1310, RN1311 Equivalent Circuit Maximum Ratings (Ta = 25C) JEDE

KSC2310High Voltage Power Amplifier Collector-Base Voltage : VCBO=200V Current Gain Bandwidth Product : fT=100MHzTO-92L11. Emitter 2. Collector 3. BaseNPN Epitaxial Silicon TransistorAbsolute Maximum Ratings Ta=25C unless otherwise noted Symbol Parameter Ratings UnitsVCBO Collector-Base Voltage 200 VVCEO Collector-Emitter Voltage 150 VVEBO Emitter-Base Voltage 5

KSC2310 NPN EPITAXIAL SILICON TRANSISTORHIGH VOLTAGE POWER AMPLIFIER Collector - Base Voltage VCBO=200V TO-92L Current Gain-Bandwidth Product fT=100MHzABSOLUTE MAXIMUM RATINGS (TA=25 ) Characteristic Symbol Rating UnitVCollector-Base Voltage VCBO 200VCollector-Emitter Voltage VCEO 150VEmitter-Base Voltage VEBO 5mACollector Current IC 50mWCollector Dissipation

SQ2310ESwww.vishay.comVishay SiliconixAutomotive N-Channel 20 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) 20DefinitionRDS(on) () at VGS = 4.5 V 0.030 TrenchFET Power MOSFETRDS(on) () at VGS = 2.5 V 0.034 AEC-Q101 QualifiedcRDS(on) () at VGS = 1.5 V 0.042 100 % Rg and UIS TestedID (A) 6 Co

SI2310BFeatures Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Halogen Free Available Upon Request By Adding Suffix "-HF"Field Effect TransistorMaximum RatingsOperating Junction Temperature Range : -55C to +150

SI2310AFeatures Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS Compliant. See Ordering Information)N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Halogen Free. Green Device (Note 1)Field Effect TransistorMaximum Ratings Operating Junction Temperature Range : -55C to +150C Storage

SI2310Features Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHSCompliant. See Ordering Information)N-Channel Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1Enhancement Mode Halogen Free Available Upon Request By Adding Suffix "-HF"Field Effect TransistorMaximum Ratings Operating Junction Temperature Range : -55C to +150

2SC458 (LG), 2SC2310Silicon NPN EpitaxialApplication Low frequency low noise amplifier Complementary pair with 2SA1031 and 2SA1032OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SC458 (LG), 2SC2310Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SC458 (LG) 2SC2310 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmit

SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS(ON)=115 m Elektronische Bauelemente sRoHS Compliant Product A suffix of -C specifies halogen & lead-free SC-59 DESCRIPTIONS AThe SMG2310A utilized advanced processing techniques to achieve the Llowest possible on-resistance, extremely efficient and cost-effectiveness 33device. The SMG2310A is univers

SMG2310N 2.2A, 30V, RDS(ON) 65 m N-Channel Enhancement Mode MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen and lead-free SC-59 DESCRIPTION These miniature surface mount MOSFETs utilize High Cell ADensity process. Low RDS(on) assures minimal power loss and Lconserves energy, making this device ideal for use in power 33

SGM2310A 5 A, 60 V, RDS(ON) 115 m N-Channel Enhancement Mode Power MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-89 DESCRIPTION AThe SGM2310A utilized advanced processing techniques to 4achieve the lowest possible on-resistance, extremely efficient Top ViewC Band cost-effectiveness device. The SGM231

TSM2310 20V N-Channel MOSFET PRODUCT SUMMARY SOT-23 Pin Definition: 1. Gate VDS (V) RDS(on)(m) ID (A) 2. Source 33 @ VGS = 4.5V 4 3. Drain 20 40 @ VGS = 2.5V 3.2 100 @ VGS = 1.8V 2.0 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Application Load Switch PA Switch Ordering Info

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS CJ2310 N-Channel MOSFET ID SOT-23 V(BR)DSS RDS(on)MAX 105m@10V60V3A1. GATE 125m@4.5V2. SOURCE 3. DRAIN DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is s

SEMICONDUCTOR KU2310QTECHNICAL DATA N-Ch Trench MOSFETGENERAL DESCRIPTIONThis Trench MOSFET has better characteristics, such as fast switching time, lowon resistance, low gate charge and excellent avalanche characteristiscs. It is mainlyHsuitable for DC/DC Converter and Battery pack.TD P GLUFEATURES AVDSS=30V, ID=19A.DIM MILLIMETERSDrain to Source On Resistance

CEH2310N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 6.2A , RDS(ON) = 33m @VGS = 10V. RDS(ON) = 38m @VGS = 4.5V. RDS(ON) = 50m @VGS = 2.5V. RDS(ON) = 60m @VGS = 1.8V. D(1,2,5,6,)High dense cell design for extremely low RDS(ON).Rugged and reliable.Lead-free plating ; RoHS compliant.45TSOP-6 package.6G(3)321S(4)TSOP-6ABSOLUTE

CES2310N-Channel Enhancement Mode Field Effect TransistorFEATURES30V, 4.8A, RDS(ON) = 34m @VGS = 10V. RDS(ON) = 38m @VGS = 4.5V. RDS(ON) = 50m @VGS = 2.5V. RDS(ON) = 60m @VGS = 1.8V.DHigh dense cell design for extremely low RDS(ON).Rugged and reliable.Lead-free plating ; RoHS compliant.SOT-23 package.GDSGSSOT-23ABSOLUTE MAXIMUM RATINGS TA = 25 C u

WTM2310AN-Channel Enhancement 3 DRAINMode Power MOSFET DRAIN CURRENT5.0 AMPERESP b Lead(Pb)-FreeDRAIN SOUCE VOLTAGE160 VOLTAGEGATEFeatures:2 SOURCE* Simple Drive Requirement.* Super High Density Cell Design for Extremely Low RDS(ON).1231. GATE2. DRAIN3. SOURCESOT-89Maximum Ratings (TA=25C Unless Otherwise Specified)Rating Symbol Value UnitVDS VD

AONS3231030V N-Channel MOSFETGeneral Description Product SummaryVDS Trench Power MOSFET technology 30V Low RDS(ON) ID (at VGS=10V) 400A Low Gate Charge RDS(ON) (at VGS=10V)

AP2310GG-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Lower Gate Charge BVDSS 60VD Fast Switching Characteristic RDS(ON) 90m Simple Drive Requirement ID 2.7AG RoHS Compliant & Halogen-FreeSDDescriptionAdvanced Power MOSFETs from APEC provide thedesigner with the best combination of fast switching,Srug

AP2310GK-HFHalogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Lower Gate Charge RDS(ON) 90mS Fast Switching Characteristic ID 4.1AD RoHS Compliant & Halogen-FreeSOT-223GDescriptionDAdvanced Power MOSFETs from APEC

AP2310CGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 75m Surface Mount Device ID 3.2AS Halogen Free & RoHS Compliant ProductSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible

AP2310AGN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 65VD Small Package Outline RDS(ON) 80m Surface Mount Device ID 3AS RoHS Compliant & Halogen-FreeSOT-23GDDescriptionAP2310A series are from Advanced Power innovated design and siliconprocess technology to achieve the lo

AP2310GN-HFHalogen-Free ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFET Simple Drive Requirement BVDSS 60VD Small Package Outline RDS(ON) 90m Surface Mount Device ID 3AS RoHS CompliantSOT-23GDDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance, extremely e

AP2310GNPb Free Plating ProductAdvanced Power N-CHANNEL ENHANCEMENT MODEElectronics Corp. POWER MOSFETSimple Drive Requirement BVDSS 60V Small Package Outline RDS(ON) 90m DSurface Mount Device ID 3A SSOT-23GDescriptionAdvanced Power MOSFETs utilized advanced processing techniques toachieve the lowest possible o

Analog Power AM2310NN-Channel Logic Level MOSFETThese miniature surface mount MOSFETs PRODUCT SUMMARYutilize High Cell Density process. Low rDS(on) assures minimal power loss and VDS (V) rDS(on) ()ID (A)conserves energy, making this device ideal 0.065 @ VGS = 4.5V 2.2for use in power management circuitry. 300.082 @ VGS = 2.5V 2.0Typical applications are lower voltage

Shenzhen Tuofeng Semiconductor Technology Co., Ltd Si2310N-CHANNEL ENHANCEMENT MODEPOWER MOSFETSimple Drive Requirement BVDSS 60V Small Package Outline RDS(ON) 90m DSurface Mount Device ID 3A SSOT-23GDescription The MOSFETs utilized advanced processing techniques toachieve the lowest possible on-resistance,

Spec. No. : C393V8 Issued Date : 2013.06.13 CYStech Electronics Corp.Revised Date : 2013.06.24 Page No. : 1/9 N-Channel Logic Level Enhancement Mode Power MOSFET BVDSS 60VMTN2310V8ID 14A31m VGS=10V, ID=3A RDSON(TYP) 35m VGS=4.5V, ID=2A Description The MTN2310V8 is a N-channel enhancement-mode MOSFET, providing the designer with the best combination of fast s

Spec. No. : C393M3 Issued Date : 2007.05.28 CYStech Electronics Corp.Revised Date : 2015.09.02 Page No. : 1/9 60V N-Channel Enhancement Mode MOSFET BVDSS 60VMTN2310M3 ID@VGS=10V, TA=25C 4.8A RDSON@VGS=10V, ID=4A 41m(typ) RDSON@VGS=5V, ID=3A 46m(typ) Features Simple drive requirement Small package outline Pb-free lead plating package Symbol Outline

Spec. No. : C393N3 CYStech Electronics Corp. Issued Date : 2007.11.26 Revised Date :2013.12.30 Page No. : 1/9 60V N-CHANNEL Enhancement Mode MOSFET BVDSS 60VMTN2310N3 ID 4ARDSON@VGS=10V, ID=4A 41m(typ) RDSON@VGS=5V, ID=3A 46m(typ) Features Simple drive requirement Small package outline Pb-free lead plating and halogen-free package Symbol Outline MT

BRCS2310MA Rev.B May.-2020 DATA SHEET / Descriptions SOT-23 N MOS N- CHANNEL MOSFET in a SOT-23 Plastic Package. / Features R SOT-23 DS(ON)Super high dense cell design for low RDS(ON),SOT-23 package. HF product. / Applications

SM2310NSA N-Channel Enhancement Mode MOSFETFeatures Pin Description 55V/2.1A ,D RDS(ON)=130m (max.) @ VGS=4.5VS RDS(ON)=180m (max.) @ VGS=2.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-23-3(RoHS Compliant)DApplicationsG Power Management in DC/AC Inverer Systems.SN-Channel MOSFETOrdering and Marking InformationSM2310NS Pac

SEMICONDUCTORFTK2310TECHNICAL DATAFTK2310 N-Channel MOSFET DGDESCRIPTIONThe FTK2310 uses advanced trench technology to provide excellent SSchematic diagram RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. D3This device is suitable for use as a battery protection or in other switching S10application. G 1 2 SMarking and pin Assignment F

SMD Type MOSFETN-Channel Enhancement MOSFETKI2310SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features 3 VDS=20V ID = 6 .5A RDS(on)= 22m@VGS=4.5V ,ID=6.5A1 2 RDS(on)= 30m@VGS=2.5V ,ID=5.5A +0.050.95+0.1-0.1 0.1 -0.011.9+0.1-0.1G 13 D1.GateS 22.Source3.Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Dr

SMD Type MOSFETN-Channel Enhancement MOSFETKI2310DSSOT-23-3Unit: mm+0.22.9 -0.1+0.10.4-0.13 Features VDS=20V ID = 6 .5A RDS(on)= 22m@VGS=4.5V ,ID=6.5A1 2+0.02+0.1 RDS(on)= 30m@VGS=2.5V ,ID=5.5A 0.15 -0.020.95 -0.1+0.11.9 -0.2G 13 D1. GateS 22. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rati

CHENMKO ENTERPRISE CO.,LTDCHM2310GPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 30 Volts CURRENT 4.8 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-59/SOT-346FEATURE* Small flat package. (SC-59 )* High density cell design for extremely low RDS(ON). * Rugged and reliable.* High saturati

SHD231009 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4305, REV - HERMETIC P-CHANNEL JFET FEATURES: 30 V, 75 , 30 mA P-Channel JFET Hermetically Sealed Surface Mount Package: Ceramic LCC-3 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE ID = 1A, VDS = 0V VGS - - 30 V

SENSITRON SHD231006 SEMICONDUCTORTECHNICAL DATA DATA SHEET 4322, REV. A HERMETIC POWER MOSFET N-CHANNEL SHD231006S -- S-100 (JANTX level room temp) Screening per Sensitron datasheet FEATURES: 60 Volt, 3.0 Ohm, 0.25 A MOSFET Isolated Hermetic, Ceramic Package Fast Switching Low RDS (on) MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25C UNLESS OTHERWISE SPEC

SHD231008 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4302, REV - HERMETIC DEPLETION MODE DMOS N-CHANNEL FEATURES: 250 V, 6 , 300 mA DMOS N-Channel FET Hermetically Sealed Surface Mount Package: Ceramic LCC-3 MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25C UNLESS OTHERWISE SPECIFIED. RATING SYMBOL MIN. TYP. MAX. UNITS GATE TO SOURCE VOLTAGE VGS - - 2

SSM2310GNN-channel Enhancement-mode Power MOSFETPRODUCT SUMMARY DESCRIPTIONThe SSM2310GN acheives fast switching performanceBVDSS 60Vwith low gate charge without a complex drive circuit. ItRDS(ON) 90mis suitable for low voltage applications such as DC/DCconverters and general load-switching circuits.I 3AD The SSM2310GN is supplied in an RoHS-compliantPb-free; RoHS-com

SL2310N-Channel Power MOSFET DGeneral Features G VDS =60V,ID =3A RDS(ON)

RUMWUMW SI2310AUMW SI2310AUMW SI2310AN-ChanneI Power MOSFET FeaturesSOT23 Simple Drive Requirement Small Package Outline Surface Mount Device1. GATE 2. SOURCE 3. DRAIN MARKING DGMS10S Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating UnitDrain-Source Voltage VD S 60 VGSGate-Source Voltage V 20 VAContinuous Drain Current

AIIP ERAP2310S DATA SHEET N-Channel pwer MOSFETDescriptinThe AP2310S uses advanced trench technol y to provide N} low gate charge and operation with gate excellent Rosco , voltages as low as 2.5V. This device is suitable for use as a Ba eprotection or in other switching application. Schematic Diagram General Features 3A Vos =60V o =,lRos(ON}

AS2310 N-Channel Enhancement Mode MOSFETProduct Summary V(BR)DSS RDS(on)MAX ID 100m@10V 60V 3A 120m@4.5V Feature Application High power and current handing capability Battery Switch Lead free product is acquired DC/DC Converter Package Circuit diagram SOT-23 Marking S10. Document ID Issued Date Revised Date Revision Page. Page 1 AS-3150040 2003/03/08 2018

SI2310MOSFET ROHSN-Channel Enhancement-Mode MOSFET SOT-23-FeaturesAdvanced trench process technology High Density Cell Design For Ultra Low On-ResistanceHigh Power and Current handing capability MAXIMUM RANTINGSParameter Symbol Ratings UnitDrain-Source Voltage VDSS 60VGate-Source Voltage VGSS 16Drain Current (Note 1) ID 3.8 APower Dissipation (N

HSS2310A N-Ch 60V Fast Switching MOSFETs Product Summary Description VDS 60 V The HSS2310A is the high cell density trenched N-ch MOSFETs, which provides excellent RDSON RDS(ON),typ 80 m and efficiency for most of the small power switching and load switch applications. ID 2.3 A The HSS2310A meet the RoHS and Green Product requirement with full function reliability appr

HD2310SOT-23 Plastic-Encapsulate MOSFET N -Channel MOSFET roduct SummaryP ID V(BR)DSS RDS(on)MAX SOT- 23105m@10VD60V3A125m@4.5VSFeatures High power and current handing capability G Lead free product is acquired Surface mount package Applications DC/DC Converters Battery SwitchMarking: S10Parameter Symbol Va

SI2310 SOT-23 Plastic-Encapsulate MOSFETS SOT-23 30V N-Channel MOSFET 3 ID MaxV(BR)DSS RDS(on)Typ 105m@10V 1. GATE 3A 60V 2. SOURCE 125m@4.5V 1 3. DRAIN 2 DESCRIPTION The SI2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery prote

MEM2310 N-Channel MOSFET MEM2310M3 General Description Features MEM2310M3G Series N-channel enhancement mode 30V/5.8A field-effect transistor ,produced with high cell density RDS(ON) =25m@ VGS=10V, ID=5.8A DMOS trench technology, which is especially used to RDS(ON) =28m@ VGS=4.5V, ID=5A minimize on-state resistance. This device particularly RDS(ON) =37m@ VGS=2.5V, ID=4A

MEM2310 N-Channel MOSFET MEM2310X General Description Features MEM2310XG Series N-channel enhancement mode 30V/5.8A field-effect transistor ,produced with high cell density RDS(ON) =25m@ VGS=10V, ID=5.8A DMOS trench technology, which is especially used to RDS(ON) =28m@ VGS=4.5V, ID=5A minimize on-state resistance. This device particularly RDS(ON) =37m@ VGS=2.5V, ID=4A s

SI2310 20V N-Channel Enhancement Mode MOSFETVDS= 20V RDS(ON), Vgs@4.5V, Ids@5.0A

N-Channel Enhancement Power Mosfet SpecificationPower Mosfet Specification SOT-23 Features Advanced trench cell design 3 High speed switch Applications Portable appliances Notebook/PC appliances Power Management 2 DC/DC Converter 1 Quick reference 1Gate 2Gate 2Source 3Drain BV 60 V ID=3A RDS(ON) 90 m @ VGS = 10 V RDS(ON) 11

SHENZHEN TUOFENG SEMICONDUCTOR TECHNOLOGY CO.,LTDSOT-23 Plastic-Encapsulate MOSFETSTF2310N-Channel 60-V(D-S) MOSFETTF2310V(BR)DSS RDS(on)MAX IDSOT-230.090@ 10V360V3.0 A1.GATE0.120@ 4.5 V2.SOURCE3.DRAIN12General Features VDS =60V,ID =3A RDS(ON)

SI2310www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1

AP2310GGwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n

HM2310PRwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwise n

HM2310www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1

KD2310www.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G 1

ME2310www.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.030 at VGS = 10 V TrenchFET Power MOSFET6.530 4.5 nC 100 % Rg Tested0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS DC/DC ConverterDTO-236(SOT-23)G 1

HM2310BN Channel Enhancement Mode MOSFET DESCRIPTION The HM2310B is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook co

HM2310PRDescription The HM2310PR uses advanced trench technology to provide Dexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a GBattery protection or in other switching application. SGeneral Feature VDS =60V,ID =4.0A Schematic diagram RDS(ON)

HM2310N-Channel Enhancement Mode Power MOSFET DDESCRIPTION The HM2310 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a SBattery protection or in other Switching application. Schematic diagram GENERAL FEATURES VDS =60V,ID =3A RDS(ON)

HM N Channel Enhancement Mode MOSFET DESCRIPTION The HM2310C is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high-density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook co