All MOSFET. SPA22N65G Datasheet

 

SPA22N65G Datasheet and Replacement


   Type Designator: SPA22N65G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 463 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO247
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SPA22N65G Datasheet (PDF)

 ..1. Size:959K  cn sinai power
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SPA22N65G

SPA22N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=22A(Vgs=10V) R max. at 25oC () V =10V 0.28 DS(on) GS Ultra Low Gate Charge Q max. (nC) 160 g Improved dv/dt Capability Q (nC) 31 gs 100% Avalanche Tested Q (nC) 52 gd ROHS compliant Configuration single

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History: RSR025N05 | NP180N04TUJ | ZVN4210GTC | WMM07N65C4 | TPCA8047-H | SM4186T9RL | APT10021JFLL

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