All MOSFET. SPA22N65G Datasheet

 

SPA22N65G Datasheet and Replacement


   Type Designator: SPA22N65G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 22 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 463 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO247
 

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SPA22N65G Datasheet (PDF)

 ..1. Size:959K  cn sinai power
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SPA22N65G

SPA22N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=22A(Vgs=10V) R max. at 25oC () V =10V 0.28 DS(on) GS Ultra Low Gate Charge Q max. (nC) 160 g Improved dv/dt Capability Q (nC) 31 gs 100% Avalanche Tested Q (nC) 52 gd ROHS compliant Configuration single

Datasheet: XG65T125PS1B , XG65T230PS1B , XGP6508B , XGP6510B , YWNM6001 , 2N7002AK , 2310 , 3407 , SPP20N60C3 , SPA24N50G , SPA65R38G , SPA65R72G , SPC10N65G , SPC10N80G , SPC16N65G , SPC18N50G , SPC20N65G .

History: HSM3206 | SFF9240M | 2SK3541M3T5 | IPD65R600E6 | KIA6N70H-220F | WVM30N30 | 1H10

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