All MOSFET. SPA22N65G Datasheet

 

SPA22N65G MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPA22N65G
   Marking Code: 22N65G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 22 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 120 nC
   trⓘ - Rise Time: 88 nS
   Cossⓘ - Output Capacitance: 463 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO247

 SPA22N65G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPA22N65G Datasheet (PDF)

 ..1. Size:959K  cn sinai power
 spa22n65g.pdf

SPA22N65G SPA22N65G

SPA22N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=22A(Vgs=10V) R max. at 25oC () V =10V 0.28 DS(on) GS Ultra Low Gate Charge Q max. (nC) 160 g Improved dv/dt Capability Q (nC) 31 gs 100% Avalanche Tested Q (nC) 52 gd ROHS compliant Configuration single

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF7779L2TRPBF | FDS8812NZ

 

 
Back to Top