SPA22N65G MOSFET. Datasheet pdf. Equivalent
Type Designator: SPA22N65G
Marking Code: 22N65G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 280 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 22 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 120 nC
trⓘ - Rise Time: 88 nS
Cossⓘ - Output Capacitance: 463 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO247
SPA22N65G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPA22N65G Datasheet (PDF)
..1. Size:959K cn sinai power
spa22n65g.pdf
spa22n65g.pdf
SPA22N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=22A(Vgs=10V) R max. at 25oC () V =10V 0.28 DS(on) GS Ultra Low Gate Charge Q max. (nC) 160 g Improved dv/dt Capability Q (nC) 31 gs 100% Avalanche Tested Q (nC) 52 gd ROHS compliant Configuration single
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
