All MOSFET. SPA24N50G Datasheet

 

SPA24N50G Datasheet and Replacement


   Type Designator: SPA24N50G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 280 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 24 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 82 nS
   Cossⓘ - Output Capacitance: 472 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO247
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SPA24N50G Datasheet (PDF)

 ..1. Size:1014K  cn sinai power
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SPA24N50G

SPA24N50G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 500 DS J ID=24A(Vgs=10V) R max. at 25oC () V =10V 0.2 DS(on) GS Ultra Low Gate Charge Q max. (nC) 160 g Improved dv/dt Capability Q (nC) 30 gs 100% Avalanche Tested Q (nC) 53 gd ROHS compliant Configuration single A

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: TPCA8036-H | BRCS200P03DP | IRFB3004GPBF | LNC08R055W3 | SI3407DV | LKK47-06C5 | TSM4424CS

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