SPA65R38G MOSFET. Datasheet pdf. Equivalent
Type Designator: SPA65R38G
Marking Code: 65R38G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 625 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 69 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 200 nC
trⓘ - Rise Time: 77 nS
Cossⓘ - Output Capacitance: 250 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
Package: TO247
SPA65R38G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPA65R38G Datasheet (PDF)
spa65r38g.pdf
SPA65R38G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J New Technology For High Voltage Device R max. at 25oC (m) V =10V 38 DS(on) GS ID=69A(Vgs=10V) Q max. (nC) 250 g Ultra Low Gate Charge Q (nC) 33 gs Improved dv/dt Capability Q (nC) 65 gd RoHS Compliant Configu
spa65r72g.pdf
SPA65R72G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=47A(Vgs=10V) R max. at 25oC (m) V =10V 72 DS(on) GS Ultra Low Gate Charge Q max. (nC) 130 g Improved dv/dt Capability Q (nC) 30 gs RoHS compliant Q (nC) 34 gdConfiguration single Applications Switching
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