All MOSFET. SPA65R38G Datasheet

 

SPA65R38G Datasheet and Replacement


   Type Designator: SPA65R38G
   Marking Code: 65R38G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id| ⓘ - Maximum Drain Current: 69 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 200 nC
   tr ⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO247
 

 SPA65R38G substitution

   - MOSFET ⓘ Cross-Reference Search

 

SPA65R38G Datasheet (PDF)

 ..1. Size:690K  cn sinai power
 spa65r38g.pdf pdf_icon

SPA65R38G

SPA65R38G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J New Technology For High Voltage Device R max. at 25oC (m) V =10V 38 DS(on) GS ID=69A(Vgs=10V) Q max. (nC) 250 g Ultra Low Gate Charge Q (nC) 33 gs Improved dv/dt Capability Q (nC) 65 gd RoHS Compliant Configu

 8.1. Size:796K  cn sinai power
 spa65r72g.pdf pdf_icon

SPA65R38G

SPA65R72G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=47A(Vgs=10V) R max. at 25oC (m) V =10V 72 DS(on) GS Ultra Low Gate Charge Q max. (nC) 130 g Improved dv/dt Capability Q (nC) 30 gs RoHS compliant Q (nC) 34 gdConfiguration single Applications Switching

Datasheet: XGP6508B , XGP6510B , YWNM6001 , 2N7002AK , 2310 , 3407 , SPA22N65G , SPA24N50G , 2SK3568 , SPA65R72G , SPC10N65G , SPC10N80G , SPC16N65G , SPC18N50G , SPC20N65G , SPC4N65G , SPC65R180G .

History: IRF6713S | KHB4D0N65P | SFB070N150C3 | ME4468 | MMBF4118 | SSW4668 | NCE1013E

Keywords - SPA65R38G MOSFET datasheet

 SPA65R38G cross reference
 SPA65R38G equivalent finder
 SPA65R38G lookup
 SPA65R38G substitution
 SPA65R38G replacement

 

 
Back to Top

 


 
.