All MOSFET. SPA65R38G Datasheet

 

SPA65R38G MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPA65R38G
   Marking Code: 65R38G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 625 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 69 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 200 nC
   trⓘ - Rise Time: 77 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm
   Package: TO247

 SPA65R38G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPA65R38G Datasheet (PDF)

 ..1. Size:690K  cn sinai power
 spa65r38g.pdf

SPA65R38G SPA65R38G

SPA65R38G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J New Technology For High Voltage Device R max. at 25oC (m) V =10V 38 DS(on) GS ID=69A(Vgs=10V) Q max. (nC) 250 g Ultra Low Gate Charge Q (nC) 33 gs Improved dv/dt Capability Q (nC) 65 gd RoHS Compliant Configu

 8.1. Size:796K  cn sinai power
 spa65r72g.pdf

SPA65R38G SPA65R38G

SPA65R72G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=47A(Vgs=10V) R max. at 25oC (m) V =10V 72 DS(on) GS Ultra Low Gate Charge Q max. (nC) 130 g Improved dv/dt Capability Q (nC) 30 gs RoHS compliant Q (nC) 34 gdConfiguration single Applications Switching

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
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