SPC16N65G MOSFET. Datasheet pdf. Equivalent
Type Designator: SPC16N65G
Marking Code: 16N65G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 16 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 67 nC
trⓘ - Rise Time: 66 nS
Cossⓘ - Output Capacitance: 217 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO220F
SPC16N65G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPC16N65G Datasheet (PDF)
..1. Size:1758K cn sinai power
spc16n65g.pdf
spc16n65g.pdf
SPC16N65GSinai Power Technologies www.sinai-power.com N-channel Power MOSFET Features TO-220F BVDSS : 700V High ruggedness Low RDS(ON) (Typ 0.54)@VGS=10V ID : 16A Low Gate Charge (Typ 67nC) RDS(ON) : 0.54 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application: LED, PC Power, Charger 2 3 1 1. Gate 2. Drain 3. Source
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
