SPC16N65G Specs and Replacement
Type Designator: SPC16N65G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 66 nS
Cossⓘ - Output Capacitance: 217 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
Package: TO220F
SPC16N65G substitution
- MOSFET ⓘ Cross-Reference Search
SPC16N65G datasheet
spc16n65g.pdf
SPC16N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET Features TO-220F BVDSS 700V High ruggedness Low RDS(ON) (Typ 0.54 )@VGS=10V ID 16A Low Gate Charge (Typ 67nC) RDS(ON) 0.54 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application LED, PC Power, Charger 2 3 1 1. Gate 2. Drain 3. Source ... See More ⇒
Detailed specifications: 2310, 3407, SPA22N65G, SPA24N50G, SPA65R38G, SPA65R72G, SPC10N65G, SPC10N80G, 13N50, SPC18N50G, SPC20N65G, SPC4N65G, SPC65R180G, SPB65R180G, SPC65R360G, SPE65R360G, SPD65R360G
Keywords - SPC16N65G MOSFET specs
SPC16N65G cross reference
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SPC16N65G replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: IXFB52N90P
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