All MOSFET. SPC16N65G Datasheet

 

SPC16N65G Datasheet and Replacement


   Type Designator: SPC16N65G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 700 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 66 nS
   Cossⓘ - Output Capacitance: 217 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO220F
 

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SPC16N65G Datasheet (PDF)

 ..1. Size:1758K  cn sinai power
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SPC16N65G

SPC16N65GSinai Power Technologies www.sinai-power.com N-channel Power MOSFET Features TO-220F BVDSS : 700V High ruggedness Low RDS(ON) (Typ 0.54)@VGS=10V ID : 16A Low Gate Charge (Typ 67nC) RDS(ON) : 0.54 Improved dv/dt Capability 100% Avalanche Tested 2 1 Application: LED, PC Power, Charger 2 3 1 1. Gate 2. Drain 3. Source

Datasheet: 2310 , 3407 , SPA22N65G , SPA24N50G , SPA65R38G , SPA65R72G , SPC10N65G , SPC10N80G , TK10A60D , SPC18N50G , SPC20N65G , SPC4N65G , SPC65R180G , SPB65R180G , SPC65R360G , SPE65R360G , SPD65R360G .

History: FQA17N40 | SM1A06NSKP | STL60N3LLH5 | AOD474A | 2SJ606-ZJ | SI7478DP | BRF8N80

Keywords - SPC16N65G MOSFET datasheet

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