SPC18N50G Specs and Replacement
Type Designator: SPC18N50G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 315 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO220F
SPC18N50G substitution
- MOSFET ⓘ Cross-Reference Search
SPC18N50G datasheet
spc18n50g.pdf
SPC18N50G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 550 DS J ID=18A(Vgs=10V) R max. at 25oC ( ) V =10V 0.30 DS(on) GS Ultra Low Gate Charge Q max. (nC) 88 g Improved dv/dt Capability Q (nC) 21 gs 100% Avalanche Tested Q (nC) 28 gd ROHS compliant Configuration single Ap... See More ⇒
Detailed specifications: 3407, SPA22N65G, SPA24N50G, SPA65R38G, SPA65R72G, SPC10N65G, SPC10N80G, SPC16N65G, AON7410, SPC20N65G, SPC4N65G, SPC65R180G, SPB65R180G, SPC65R360G, SPE65R360G, SPD65R360G, SPC65R90G
Keywords - SPC18N50G MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: STF13NM50N | APM9410K
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