SPC18N50G MOSFET. Datasheet pdf. Equivalent
Type Designator: SPC18N50G
Marking Code: 18N50G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 40 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
|Id|ⓘ - Maximum Drain Current: 18 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 88 nC
trⓘ - Rise Time: 65 nS
Cossⓘ - Output Capacitance: 315 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
Package: TO220F
SPC18N50G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPC18N50G Datasheet (PDF)
..1. Size:916K cn sinai power
spc18n50g.pdf
spc18n50g.pdf
SPC18N50G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 550 DS J ID=18A(Vgs=10V)R max. at 25oC () V =10V 0.30 DS(on) GS Ultra Low Gate Charge Q max. (nC) 88 g Improved dv/dt Capability Q (nC) 21 gs 100% Avalanche Tested Q (nC) 28 gd ROHS compliant Configuration single Ap
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