All MOSFET. SPC18N50G Datasheet

 

SPC18N50G Datasheet and Replacement


   Type Designator: SPC18N50G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 40 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 18 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 65 nS
   Cossⓘ - Output Capacitance: 315 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO220F
 

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SPC18N50G Datasheet (PDF)

 ..1. Size:916K  cn sinai power
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SPC18N50G

SPC18N50G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 550 DS J ID=18A(Vgs=10V)R max. at 25oC () V =10V 0.30 DS(on) GS Ultra Low Gate Charge Q max. (nC) 88 g Improved dv/dt Capability Q (nC) 21 gs 100% Avalanche Tested Q (nC) 28 gd ROHS compliant Configuration single Ap

Datasheet: 3407 , SPA22N65G , SPA24N50G , SPA65R38G , SPA65R72G , SPC10N65G , SPC10N80G , SPC16N65G , RFP50N06 , SPC20N65G , SPC4N65G , SPC65R180G , SPB65R180G , SPC65R360G , SPE65R360G , SPD65R360G , SPC65R90G .

History: HSS2301B | UPA2731UT1A | VP2206N3 | UPA2728GR | DH012N03 | NVC3S5A51PLZ | IRF6645PBF

Keywords - SPC18N50G MOSFET datasheet

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