All MOSFET. SPB65R180G Datasheet

 

SPB65R180G MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPB65R180G
   Marking Code: 65R180G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 341 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 20 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 60 nC
   trⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 69 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220

 SPB65R180G Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPB65R180G Datasheet (PDF)

 ..1. Size:826K  cn sinai power
 spc65r180g spb65r180g.pdf

SPB65R180G SPB65R180G

SPC65R180G,SPB65R180G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J New Technology For High Voltage Device R max. at 25oC (m) V =10V 180 DS(on) GS ID=20A(Vgs=10V) Q max. (nC) 75 g Ultra Low Gate Charge Q (nC) 17 gs Improved dv/dt Capability Q (nC) 26 gd RoHS Compli

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: GMS2302 | WPM3022

 

 
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