SPB65R180G MOSFET. Datasheet pdf. Equivalent
Type Designator: SPB65R180G
Marking Code: 65R180G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 341 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 60 nC
trⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 69 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO220
SPB65R180G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPB65R180G Datasheet (PDF)
..1. Size:826K cn sinai power
spc65r180g spb65r180g.pdf
spc65r180g spb65r180g.pdf
SPC65R180G,SPB65R180G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J New Technology For High Voltage Device R max. at 25oC (m) V =10V 180 DS(on) GS ID=20A(Vgs=10V) Q max. (nC) 75 g Ultra Low Gate Charge Q (nC) 17 gs Improved dv/dt Capability Q (nC) 26 gd RoHS Compli
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