SPB65R180G PDF and Equivalents Search

 

SPB65R180G Specs and Replacement

Type Designator: SPB65R180G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 341 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 69 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm

Package: TO220

SPB65R180G substitution

- MOSFET ⓘ Cross-Reference Search

 

SPB65R180G datasheet

 ..1. Size:826K  cn sinai power
 spc65r180g spb65r180g.pdf pdf_icon

SPB65R180G

SPC65R180G,SPB65R180G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J New Technology For High Voltage Device R max. at 25oC (m ) V =10V 180 DS(on) GS ID=20A(Vgs=10V) Q max. (nC) 75 g Ultra Low Gate Charge Q (nC) 17 gs Improved dv/dt Capability Q (nC) 26 gd RoHS Compli... See More ⇒

Detailed specifications: SPA65R72G, SPC10N65G, SPC10N80G, SPC16N65G, SPC18N50G, SPC20N65G, SPC4N65G, SPC65R180G, IRFB3607, SPC65R360G, SPE65R360G, SPD65R360G, SPC65R90G, SPC7N65G, SPC9N50G, SPD3N80G, SPD5N50G

Keywords - SPB65R180G MOSFET specs

 SPB65R180G cross reference

 SPB65R180G equivalent finder

 SPB65R180G pdf lookup

 SPB65R180G substitution

 SPB65R180G replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

↑ Back to Top
.