All MOSFET. SPB65R180G Datasheet

 

SPB65R180G Datasheet and Replacement


   Type Designator: SPB65R180G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 341 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 69 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
   Package: TO220
 

 SPB65R180G substitution

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SPB65R180G Datasheet (PDF)

 ..1. Size:826K  cn sinai power
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SPB65R180G

SPC65R180G,SPB65R180G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J New Technology For High Voltage Device R max. at 25oC (m) V =10V 180 DS(on) GS ID=20A(Vgs=10V) Q max. (nC) 75 g Ultra Low Gate Charge Q (nC) 17 gs Improved dv/dt Capability Q (nC) 26 gd RoHS Compli

Datasheet: SPA65R72G , SPC10N65G , SPC10N80G , SPC16N65G , SPC18N50G , SPC20N65G , SPC4N65G , SPC65R180G , AON7506 , SPC65R360G , SPE65R360G , SPD65R360G , SPC65R90G , SPC7N65G , SPC9N50G , SPD3N80G , SPD5N50G .

History: IRFHM830 | RUH4040M3 | VS3602GPMT | KF7N65F | BSS84LT1 | PQ6S2JN | MMBF5103

Keywords - SPB65R180G MOSFET datasheet

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