SPE65R360G MOSFET. Datasheet pdf. Equivalent
Type Designator: SPE65R360G
Marking Code: 65R360G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 101 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 11.5 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 45 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
Package: TO251
SPE65R360G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPE65R360G Datasheet (PDF)
..1. Size:718K cn sinai power
spc65r360g spe65r360g spd65r360g.pdf
spc65r360g spe65r360g spd65r360g.pdf
SPC65R360G,SPE65R360G,SPD65R360G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J New Technology For High Voltage Device R max. at 25oC (m) V =10V 360 DS(on) GS ID=11.5A(Vgs=10V) Q max. (nC) 30 g Ultra Low Gate Charge Q (nC) 8.5 gs Improved dv/dt Capability Q (nC) 7.5 gd
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
