All MOSFET. SPE65R360G Datasheet

 

SPE65R360G Datasheet and Replacement


   Type Designator: SPE65R360G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 101 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 11.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 45 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm
   Package: TO251
 

 SPE65R360G substitution

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SPE65R360G Datasheet (PDF)

 ..1. Size:718K  cn sinai power
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SPE65R360G

SPC65R360G,SPE65R360G,SPD65R360G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J New Technology For High Voltage Device R max. at 25oC (m) V =10V 360 DS(on) GS ID=11.5A(Vgs=10V) Q max. (nC) 30 g Ultra Low Gate Charge Q (nC) 8.5 gs Improved dv/dt Capability Q (nC) 7.5 gd

Datasheet: SPC10N80G , SPC16N65G , SPC18N50G , SPC20N65G , SPC4N65G , SPC65R180G , SPB65R180G , SPC65R360G , IRF530 , SPD65R360G , SPC65R90G , SPC7N65G , SPC9N50G , SPD3N80G , SPD5N50G , SPD7N65G , SPE4N65G .

History: SPC65R360G

Keywords - SPE65R360G MOSFET datasheet

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