SPE65R360G PDF and Equivalents Search

 

SPE65R360G Specs and Replacement

Type Designator: SPE65R360G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 101 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 11.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 45 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.36 Ohm

Package: TO251

SPE65R360G substitution

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SPE65R360G datasheet

 ..1. Size:718K  cn sinai power
 spc65r360g spe65r360g spd65r360g.pdf pdf_icon

SPE65R360G

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Detailed specifications: SPC10N80G, SPC16N65G, SPC18N50G, SPC20N65G, SPC4N65G, SPC65R180G, SPB65R180G, SPC65R360G, IRF530, SPD65R360G, SPC65R90G, SPC7N65G, SPC9N50G, SPD3N80G, SPD5N50G, SPD7N65G, SPE4N65G

Keywords - SPE65R360G MOSFET specs

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