SPC9N50G MOSFET. Datasheet pdf. Equivalent
Type Designator: SPC9N50G
Marking Code: 9N50G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 36 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 31.5 nC
trⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 143 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.77 Ohm
Package: TO220F
SPC9N50G Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPC9N50G Datasheet (PDF)
spc9n50g.pdf
SPC9N50GSinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 550 DS J A(Vgs=10V) ID 9 oR typ. at 25 C () V =10V 0.64 DS(on) GS Ultra Low Gate Charge Q max. (nC) 31.5 g Improved dv/dt Capability Q (nC) 12 gs 100% Avalanche Tested Q (nC) 6.5 gd ROHS compliant Configuration sing
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