All MOSFET. SPC9N50G Datasheet

 

SPC9N50G Datasheet and Replacement


   Type Designator: SPC9N50G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 9 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 143 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.77 Ohm
   Package: TO220F
 

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SPC9N50G Datasheet (PDF)

 ..1. Size:4058K  cn sinai power
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SPC9N50G

SPC9N50GSinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 550 DS J A(Vgs=10V) ID 9 oR typ. at 25 C () V =10V 0.64 DS(on) GS Ultra Low Gate Charge Q max. (nC) 31.5 g Improved dv/dt Capability Q (nC) 12 gs 100% Avalanche Tested Q (nC) 6.5 gd ROHS compliant Configuration sing

Datasheet: SPC4N65G , SPC65R180G , SPB65R180G , SPC65R360G , SPE65R360G , SPD65R360G , SPC65R90G , SPC7N65G , 20N50 , SPD3N80G , SPD5N50G , SPD7N65G , SPE4N65G , SPE7N65G , TDM31035 , TDM31050 , TDM31056 .

History: AUIRLR3705Z | GSM3432

Keywords - SPC9N50G MOSFET datasheet

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