SPC9N50G PDF and Equivalents Search

 

SPC9N50G Specs and Replacement

Type Designator: SPC9N50G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 36 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 143 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.77 Ohm

Package: TO220F

SPC9N50G substitution

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SPC9N50G datasheet

 ..1. Size:4058K  cn sinai power
 spc9n50g.pdf pdf_icon

SPC9N50G

SPC9N50G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 550 DS J A(Vgs=10V) ID 9 o R typ. at 25 C ( ) V =10V 0.64 DS(on) GS Ultra Low Gate Charge Q max. (nC) 31.5 g Improved dv/dt Capability Q (nC) 12 gs 100% Avalanche Tested Q (nC) 6.5 gd ROHS compliant Configuration sing... See More ⇒

Detailed specifications: SPC4N65G, SPC65R180G, SPB65R180G, SPC65R360G, SPE65R360G, SPD65R360G, SPC65R90G, SPC7N65G, STP80NF70, SPD3N80G, SPD5N50G, SPD7N65G, SPE4N65G, SPE7N65G, TDM31035, TDM31050, TDM31056

Keywords - SPC9N50G MOSFET specs

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