SPD3N80G PDF and Equivalents Search

 

SPD3N80G Specs and Replacement

Type Designator: SPD3N80G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 131 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 3 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 31 nS

Cossⓘ - Output Capacitance: 62 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm

Package: TO252

SPD3N80G substitution

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SPD3N80G datasheet

 ..1. Size:729K  cn sinai power
 spd3n80g.pdf pdf_icon

SPD3N80G

SPD3N80G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 850 DS J ID=3A(Vgs=10V) R max. at 25oC ( ) V =10V 4.8 DS(on) GS Ultra Low Gate Charge Q max. (nC) 22 g Improved dv/dt Capability Q (nC) 3 gs 100% Avalanche Tested Q (nC) 6 gd RoHS compliant Configuration single Applic... See More ⇒

Detailed specifications: SPC65R180G, SPB65R180G, SPC65R360G, SPE65R360G, SPD65R360G, SPC65R90G, SPC7N65G, SPC9N50G, IRFP450, SPD5N50G, SPD7N65G, SPE4N65G, SPE7N65G, TDM31035, TDM31050, TDM31056, TDM31058

Keywords - SPD3N80G MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.

 

 

 

 

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