All MOSFET. SPD3N80G Datasheet

 

SPD3N80G Datasheet and Replacement


   Type Designator: SPD3N80G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 131 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 3 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 31 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 4.8 Ohm
   Package: TO252
 

 SPD3N80G substitution

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SPD3N80G Datasheet (PDF)

 ..1. Size:729K  cn sinai power
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SPD3N80G

SPD3N80G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 850 DS J ID=3A(Vgs=10V) R max. at 25oC () V =10V 4.8DS(on) GS Ultra Low Gate Charge Q max. (nC) 22 g Improved dv/dt Capability Q (nC) 3 gs 100% Avalanche Tested Q (nC) 6 gd RoHS compliant Configuration single Applic

Datasheet: SPC65R180G , SPB65R180G , SPC65R360G , SPE65R360G , SPD65R360G , SPC65R90G , SPC7N65G , SPC9N50G , IRFP450 , SPD5N50G , SPD7N65G , SPE4N65G , SPE7N65G , TDM31035 , TDM31050 , TDM31056 , TDM31058 .

History: HM15N10D | HCD65R830

Keywords - SPD3N80G MOSFET datasheet

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