SPD5N50G Datasheet and Replacement
Type Designator: SPD5N50G
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 112 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 25 nS
Cossⓘ - Output Capacitance: 143 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO252
SPD5N50G substitution
SPD5N50G Datasheet (PDF)
spd5n50g.pdf

SPD5N50G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 550 DS J ID=5A(Vgs=10V) R max. at 25oC () V =10V 1.5DS(on) GS Ultra Low Gate Charge Q max. (nC) 42 g Improved dv/dt Capability Q (nC) 12 gs 100% Avalanche Tested Q (nC) 6.5 gd RoHS compliant Configuration single Ap
Datasheet: SPB65R180G , SPC65R360G , SPE65R360G , SPD65R360G , SPC65R90G , SPC7N65G , SPC9N50G , SPD3N80G , IRFZ24N , SPD7N65G , SPE4N65G , SPE7N65G , TDM31035 , TDM31050 , TDM31056 , TDM31058 , TDM31064 .
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