SPD5N50G PDF and Equivalents Search

 

SPD5N50G Specs and Replacement

Type Designator: SPD5N50G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 112 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 25 nS

Cossⓘ - Output Capacitance: 143 pF

Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm

Package: TO252

SPD5N50G substitution

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SPD5N50G datasheet

 ..1. Size:925K  cn sinai power
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SPD5N50G

SPD5N50G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 550 DS J ID=5A(Vgs=10V) R max. at 25oC ( ) V =10V 1.5 DS(on) GS Ultra Low Gate Charge Q max. (nC) 42 g Improved dv/dt Capability Q (nC) 12 gs 100% Avalanche Tested Q (nC) 6.5 gd RoHS compliant Configuration single Ap... See More ⇒

Detailed specifications: SPB65R180G , SPC65R360G , SPE65R360G , SPD65R360G , SPC65R90G , SPC7N65G , SPC9N50G , SPD3N80G , TK10A60D , SPD7N65G , SPE4N65G , SPE7N65G , TDM31035 , TDM31050 , TDM31056 , TDM31058 , TDM31064 .

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 


 
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