All MOSFET. SPE4N65G Datasheet

 

SPE4N65G Datasheet and Replacement


   Type Designator: SPE4N65G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 156 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 4 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 62 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm
   Package: TO251
 

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SPE4N65G Datasheet (PDF)

 ..1. Size:880K  cn sinai power
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SPE4N65G

SPE4N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=4A(Vgs=10V) R max. at 25oC () V =10V 2.4DS(on) GS Ultra Low Gate Charge Q max. (nC) 24 g Improved dv/dt Capability Q (nC) 4 gs 100% Avalanche Tested Q (nC) 8 gd RoHS compliant Configuration single Appli

Datasheet: SPE65R360G , SPD65R360G , SPC65R90G , SPC7N65G , SPC9N50G , SPD3N80G , SPD5N50G , SPD7N65G , BS170 , SPE7N65G , TDM31035 , TDM31050 , TDM31056 , TDM31058 , TDM31064 , TDM31066 , TDM3307A .

History: IRLU8726PBF | STF2NK60Z | HM150N03K | 2N65KG-TMS-T | FDMS7570S | 2SK3338-01 | SVSP80R180P7E3

Keywords - SPE4N65G MOSFET datasheet

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