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SPE4N65G Specs and Replacement

Type Designator: SPE4N65G

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 156 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 4 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 62 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.4 Ohm

Package: TO251

SPE4N65G substitution

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SPE4N65G datasheet

 ..1. Size:880K  cn sinai power
 spe4n65g.pdf pdf_icon

SPE4N65G

SPE4N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=4A(Vgs=10V) R max. at 25oC ( ) V =10V 2.4 DS(on) GS Ultra Low Gate Charge Q max. (nC) 24 g Improved dv/dt Capability Q (nC) 4 gs 100% Avalanche Tested Q (nC) 8 gd RoHS compliant Configuration single Appli... See More ⇒

Detailed specifications: SPE65R360G, SPD65R360G, SPC65R90G, SPC7N65G, SPC9N50G, SPD3N80G, SPD5N50G, SPD7N65G, BS170, SPE7N65G, TDM31035, TDM31050, TDM31056, TDM31058, TDM31064, TDM31066, TDM3307A

Keywords - SPE4N65G MOSFET specs

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