SPE7N65G Specs and Replacement
Type Designator: SPE7N65G
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 166 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 33 nS
Cossⓘ - Output Capacitance: 110 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.3 Ohm
Package: TO251
SPE7N65G substitution
- MOSFET ⓘ Cross-Reference Search
SPE7N65G datasheet
spe7n65g.pdf
SPE7N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=7A(Vgs=10V) R max. at 25oC ( ) V =10V 1.3 DS(on) GS Ultra Low Gate Charge Q max. (nC) 42 g Improved dv/dt Capability Q (nC) 6 gs 100% Avalanche Tested Q (nC) 12 gd RoHS compliant Configuration single Appli... See More ⇒
Detailed specifications: SPD65R360G, SPC65R90G, SPC7N65G, SPC9N50G, SPD3N80G, SPD5N50G, SPD7N65G, SPE4N65G, 4N60, TDM31035, TDM31050, TDM31056, TDM31058, TDM31064, TDM31066, TDM3307A, TDM3404
Keywords - SPE7N65G MOSFET specs
SPE7N65G cross reference
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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