TDM3307A Specs and Replacement
Type Designator: TDM3307A
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 24 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 18 nS
Cossⓘ - Output Capacitance: 453 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
Package: PPAK3X3-8
TDM3307A substitution
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TDM3307A datasheet
tdm3307a.pdf
DATASHEET Techcode P-Channel Enhancement Mode MOSFET TDM3307A DESCRIPTION The TDM3307A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES 30V/ 24A RDS(ON) ... See More ⇒
Detailed specifications: SPE4N65G, SPE7N65G, TDM31035, TDM31050, TDM31056, TDM31058, TDM31064, TDM31066, SI2302, TDM3404, TDM3405, TDM3406, TDM3407, TDM3408, TDM3412, TDM3415, TDM3420
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