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TDM3307A Specs and Replacement

Type Designator: TDM3307A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 24 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 453 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm

Package: PPAK3X3-8

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TDM3307A datasheet

 ..1. Size:689K  techcode semi
tdm3307a.pdf pdf_icon

TDM3307A

DATASHEET Techcode P-Channel Enhancement Mode MOSFET TDM3307A DESCRIPTION The TDM3307A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES 30V/ 24A RDS(ON) ... See More ⇒

Detailed specifications: SPE4N65G, SPE7N65G, TDM31035, TDM31050, TDM31056, TDM31058, TDM31064, TDM31066, SI2302, TDM3404, TDM3405, TDM3406, TDM3407, TDM3408, TDM3412, TDM3415, TDM3420

Keywords - TDM3307A MOSFET specs

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