All MOSFET. TDM3307A Datasheet

 

TDM3307A Datasheet and Replacement


   Type Designator: TDM3307A
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 24 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 453 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0105 Ohm
   Package: PPAK3X3-8
 

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TDM3307A Datasheet (PDF)

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TDM3307A

DATASHEETTechcodeP-Channel Enhancement Mode MOSFET TDM3307ADESCRIPTIONTheTDM3307AusesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES 30V/24A RDS(ON)

Datasheet: SPE4N65G , SPE7N65G , TDM31035 , TDM31050 , TDM31056 , TDM31058 , TDM31064 , TDM31066 , IRFZ46N , TDM3404 , TDM3405 , TDM3406 , TDM3407 , TDM3408 , TDM3412 , TDM3415 , TDM3420 .

History: HGB037N15M | SI2334DS | HCS60R260ST | RFL2N06L | NCE70N900K | BUK954R2-55B | SI4800

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