All MOSFET. TDM3406 Datasheet

 

TDM3406 Datasheet and Replacement


   Type Designator: TDM3406
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.14 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 8.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 318 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0082 Ohm
   Package: SOP8
      - MOSFET Cross-Reference Search

 

TDM3406 Datasheet (PDF)

 ..1. Size:622K  techcode semi
 tdm3406.pdf pdf_icon

TDM3406

DATASHEETTechcodeN-Channel Enhancement Mode MOSFET TDM3406DESCRIPTIONTheTDM3406usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)

 8.1. Size:633K  techcode semi
 tdm3407.pdf pdf_icon

TDM3406

DATASHEETTechcodeP-Channel Enhancement Mode MOSFET TDM3407DESCRIPTIONTheTDM3407usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES 40VPMOS RDS(ON)

 8.2. Size:372K  techcode semi
 tdm3404.pdf pdf_icon

TDM3406

DATASHEETTechcodeN-Channel Enhancement Mode MOSFET TDM3404DESCRIPTIONTheTDM3404usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)

 8.3. Size:692K  techcode semi
 tdm3408.pdf pdf_icon

TDM3406

DATASHEETTechcodeN-Channel Enhancement Mode MOSFET TDM3408DESCRIPTIONTheTDM3408usesadvancedtrenchtechnologytoprovideexcellentRDS(ON)andlowgatecharge.ThisdeviceissuitableforuseasaloadswitchorinPWMapplications.GENERALFEATURES RDS(ON)

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Keywords - TDM3406 MOSFET datasheet

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